Zobrazeno 1 - 10
of 43
pro vyhledávání: '"O. Seifarth"'
Autor:
Peter Zaumseil, O. Seifarth, Tzanimir Arguirov, Schubert, Alessandro Giussani, Thomas Schroeder
Publikováno v:
Solid State Phenomena. :467-472
Silicon and germanium films epitaxially grown on metal oxide buffer layers on Si(111) substrates are characterized by different X-ray techniques, transmission electron microscopy and Raman spectroscopy. Pr2O3 and Y2O3 or a combination of both is used
Autor:
P. Storck, H.-J. Müssig, Peter Zaumseil, Thomas Schroeder, Jarek Dabrowski, O. Seifarth, Alessandro Giussani
Publikováno v:
physica status solidi c. 6:653-662
Engineered Si wafer systems present an important materials science approach to further improve the performance of Si-based micro- and nanoelectronics. This is due to the potential to integrate alternative semiconductor layers on the mature Si wafer t
Publikováno v:
Progress in Solid State Chemistry. 34:111-119
Electronic and geometric properties of chromium oxide nanowires deposited on self-assembled block copolymer templates are evaluated by means of synchrotron radiation based spectroscopic methods like X-ray photoelectron spectroscopy (XPS) and X-ray ab
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :675-679
The charge-density-wave (CDW) transitions of 2H-TaSe2 were investigated by high resolution angle-resolved photoelectron spectroscopy. A new possible CDW mechanism combining saddle point and nesting is proposed that provides a link between CDW feature
Publikováno v:
Materials Science Forum. :391-394
Autor:
J. Dbrowski, O. Seifarth, H.-J. Müssig, Gunther Lippert, Grzegorz Kozlowski, G. Łupina, P. Dudek
Publikováno v:
Microelectronic Engineering. 86:1842-1844
We investigate a group of Hf- and Zr-based dielectrics crystallizing in the cubic perovskite structure for memory applications. The dielectrics are deposited in the form of thin layers (
Publikováno v:
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Strain engineering of thin epitaxial Si thin films on insulating oxide buffers is of special interest to boost charge carrier mobility for SOI technologies. The single crystalline Si(111)/Y 2 O 3 (111)/Pr 2 O 3 (111)/Si(111) heterostructure offers, i
Autor:
Volkmar Zielasek, Th. Schmidt, Marco Schowalter, Anders Sandell, Joachim Wollschläger, Andreas Schaefer, Andreas Rosenauer, O. Seifarth, Ch. Schulz, L. E. Walle, Thomas Schroeder, Jens Falta, Marcus Bäumer
Publikováno v:
Physical Review B. 80
Surface science studies of thin praseodymium oxide films grown on silicon substrates are of high interest in view of applications in such different fields as microelectronics and heterogeneous catalysis. In particular, a detailed characterization of
Autor:
Johannes Pollmann, Kai Rossnagel, O. Seifarth, D. Voß, Peter Krüger, Lutz Kipp, A. Mazur, Michael Skibowski
Publikováno v:
Physical Review B. 64
We report a detailed experimental and theoretical investigation of the Fermi-surface topology of the layered transition-metal dichalcogenide $2H\ensuremath{-}{\mathrm{NbSe}}_{2},$ which undergoes a second-order phase transition into an incommensurate
Autor:
C. Ramírez, J. Brandt, Rainer Adelung, W. Schattke, Michael Skibowski, Kai Rossnagel, Lutz Kipp, O. Seifarth, T. Strasser
Publikováno v:
Physical review letters 86(7), 1303-1306 (2001). doi:10.1103/PhysRevLett.86.1303
Physical review letters 86(7), 1303 - 1306 (2001). doi:10.1103/PhysRevLett.86.1303
Published by APS, College Park, Md.
Published by APS, College Park, Md.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ac640e3b63e86f0785a20caaab08bf2
https://bib-pubdb1.desy.de/record/320422
https://bib-pubdb1.desy.de/record/320422