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Conference

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Steady-state and time-resolved luminescence in InGaN layers

Autor: Maria R. Correia, Teresa Monteiro, C. Gaspar, R. Seitz, Estela Pereira, M. Heuken, O Schoen

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

InGaN layers are used as active layers of high brightness in nitride-based LEDs and lasers. Despite the progress in device development many of the fundamental optical properties are not completely understood. InGaN samples with different In content a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab508014a64bae1888be4d72cbd1abcb
https://doi.org/10.1016/s0022-2313(99)00511-6

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Chemical and Complementary Role of Fluorine in a Chlorine-Based Reactive Ion Etching of GaN

Autor: F Fouad Karouta, B. Jacobs, O. Schoen, M. Heuken

Publikováno v: physica status solidi (a). 176:755-758

Conventional reactive ion etching of epitaxially grown GaN on (0001) sapphire substrate has been investigated using a basic chemistry of SiCl4, Ar and SF6. Photoresist or plasma-deposited SiNx were used for masking. The influence of gas flow, pressur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9d4d939def5d4019c950957e2deedc4e
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<755::aid-pssa755>3.0.co

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GaInN/GaN heterostructures grown in production scale MOVPE reactors

Autor: Bernd Schineller, H. Protzmann, O. Rockenfeller, O. Schoen, Michael Heuken, H. Juergensen

Publikováno v: Le Journal de Physique IV. :Pr8-1035

Using production scale AIXTRON MOVPE reactors various heterostructures and quantum wells in the GaInN/GaN system have been studied. In an optimization from single quantun well strutures to 10 period multi quantum well structures the photoluminescence

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b830f64310f11c38e064fdd73d967b5
https://doi.org/10.1051/jp4:19998129

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Investigation of GaInN films and development of double-hetero (DH) structures for blue and green light emitters

Autor: O. Schoen, M. Schwambera, D. Schmitz, Michael Heuken, Bernd Schineller

Publikováno v: Journal of Crystal Growth. 203:340-348

GaInN single layers were investigated in order to optimise their photoluminescence properties and to find dependencies on the main growth parameters such as growth temperature, In/(In+Ga) gas phase ratio and total pressure. Several approaches for cap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cbf1f6c97cd91e1a4811733fe89b84a
https://doi.org/10.1016/s0022-0248(99)00124-4

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High quality III-nitride material grown in mass production MOCVD systems

Autor: H. Juergensen, O. Schoen, Michael Heuken, M. Schwambera, D. Schmitz, Bernd Schineller

Publikováno v: Journal of Crystal Growth. 195:297-303

We present some of the latest results obtained from single wafer horizontal tube reactors (AIX 200RF) and multiwafer planetary reactors ® (AIX 2000HT) as used for MOVPE of blue LEDs. The AIX 2000HT was set up in a configuration of 7×2″ which prov

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5dd56a03401a1f247d776d04b677a0e4
https://doi.org/10.1016/s0022-0248(98)00703-9

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MOVPE production reactors for high temperature electronics

Autor: H. Protzmann, D. Schmitz, G. Strauch, O. Schoen, Holger Juergensen, B. Wachtendorf

Publikováno v: Journal of Electronic Materials. 27:342-345

For the fabrication of epitaxial films of silicon carbide or the Group III nitrides, high growth temperatures (up to 1700°C) and fast heating and cooling of the growth environment have been found to be necessary. A range of production systems meetin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b7b2ec96febdef50f57738dc391bde1
https://doi.org/10.1007/s11664-998-0412-9

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Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization

Autor: B. Wachtendorf, D. Schmitz, Holger Juergensen, E. Woelk, O. Schoen, R. Beccard

Publikováno v: Journal of Electronic Materials. 26:1123-1126

Various Al-Ga-In Nitride alloys have been grown in AIXTRON Planetary Reactors®. GaN is grown with an excellent optical quality and very good thickness uniformity. GaInN with photoluminescence emission wavelengths in the visible blue region have also

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc1a7287f2aa5b6313ac08bf3dd60a96
https://doi.org/10.1007/s11664-997-0006-y

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