Zobrazeno 1 - 10
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pro vyhledávání: '"O. Saxod"'
Akademický článek
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Autor:
Michael Schroter, Didier Celi, O. Saxod, V.T. Vu, Pascal Chevalier, T. Rosenbaum, Cristell Maneux
Publikováno v:
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.
Due to the miniaturization in microelectronics and corresponding steep doping profiles, it is increasingly difficult to obtain reliable results from SIMS measurements. This paper aims at providing a guideline for calculating unknown profile informati
Autor:
Pascal Chevalier, Didier Celi, O. Saxod, Thomas Zimmer, V.T. Vu, T. Rosenbaum, Sebastien Fregonese
Publikováno v:
Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 2015 IEEE
Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 2015 IEEE, Oct 2015, Boston, United States
Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 2015 IEEE, Oct 2015, Boston, United States
The objective of this paper is to predict the main electrical characteristics of SiGe NPN HBTs, like the transit frequency fT, internal capacitances and pinched base sheet resistance for the next CMOS nodes by means of process and hydrodynamic simula
Autor:
S. Joblot, C. De-Buttet, Sébastien Petitdidier, F. Abbate, C. Jenny, Didier Celi, B. Ramadout, Thomas Quemerais, Sebastien Haendler, Laurent Favennec, Daniel Gloria, O. Robin, C. Richard, E. Canderle, B. Borot, K. Haxaire, N. Derrier, Remi Beneyton, Julien Rosa, G. Ribes, O. Saxod, P. Brun, Y. Campidelli, Pascal Chevalier, Cedric Durand, A. Montagne, Francois Leverd, G. Imbert, Olivier Gourhant, M. Guillermet, E. Gourvest, L. Berthier, Clement Tavernier, J. Cossalter, M. Buczko, C. Deglise, Mickael Gros-Jean, C. Julien, Jean-Damien Chapon, K. Courouble, D. Ney, G. Avenier, Patrick Maury, Y. Carminati, R. Bianchini, F. Foussadier
Publikováno v:
2014 IEEE International Electron Devices Meeting.
This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 µm2 6T-SRAM bit cell. High Speed (HS) HBT exhibi
Akademický článek
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Simulation Study of Dominant Statistical Variability Sources in 32-nm High- $\kappa$/Metal Gate CMOS
Publikováno v:
IEEE Electron Device Letters. 33:643-645
Comprehensive 3-D simulations have been carried out and compared with experimental data highlighting the dominant sources of statistical variability in 32-nm high-κ/metal gate MOSFET technology. The statistical variability sources include random dis
Autor:
D. Barge, Gerard Ghibaudo, C. Leroux, D. Pellissier-Tanon, F. Abbate, Denis Rideau, G. Bidal, Clement Tavernier, O. Saxod, G. Reimbold, Alain Toffoli, A. Soussou, G. Romano
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2013, 109, pp.282-285. ⟨10.1016/j.mee.2013.03.008⟩
Microelectronic Engineering, Elsevier, 2013, 109, pp.282-285. ⟨10.1016/j.mee.2013.03.008⟩
Display Omitted The Ge impact on the threshold voltage (VT) and the flat band voltage (VFB) of SiGe pMOSFETs is evaluated through a comparison of experiments and simulations with various SiGe thicknesses and Ge contents. Increasing Ge content shifts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a250045984f0f0de0160a27ad361368
https://hal.archives-ouvertes.fr/hal-00996510
https://hal.archives-ouvertes.fr/hal-00996510
Autor:
Herve Jaouen, Denis Rideau, Antoine Cros, O. Saxod, O. Nier, Ben Akkez, Sebastien Haendler, Frederic Monsieur, Clement Tavernier
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Autor:
Denis Rideau, V. Quenette, Erwan Dornel, O. Saxod, M. Weybright, J. P. Manceau, Davide Garetto, Clement Tavernier, Herve Jaouen
Publikováno v:
2010 International Conference on Microelectronic Test Structures (ICMTS).
This paper investigates and models Gate Induced Drain Leakage (GIDL) for a wide variety of high voltage devices with different low doped drain (LDD) structures. Based on TCAD simulations, we propose semi-analytical a pseudo-2D model for Gate induced
Akademický článek
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