Zobrazeno 1 - 8
of 8
pro vyhledávání: '"O. S. Romanyuk"'
Autor:
M. D. Andriichuk, L. D. Paranchich, S. Yu. Paranchich, O. S. Romanyuk, Yu. V. Tanasyuk, V. N. Makogonenko, T. A. Mel’nichuk
Publikováno v:
Inorganic Materials. 43:466-470
The optical and transport properties of Fe2+-doped Cd x Hg1−x Se crystals with a midgap Fe2+ level have been studied. The results demonstrate that Fe2+ ions influence both the optical and transport properties of Cd x Hg1−x Se〈Fe2+〉. The obser
Publikováno v:
Inorganic Materials. 37:556-559
HgSe〈V〉 crystals with a vanadium concentration ranging from 1024to 1026m–3were grown, and their transport properties were investigated between 77 and 400 K in magnetic fields of up to 12.73 kA/m. The effect of long-term annealing in Se vapor on
Autor:
O. S. Romanyuk, A. Ya. Gikavyi, M. D. Andriichuk, S. Yu. Paranchich, V. D. Prozorovskii, Yu. S. Paranchich, V. N. Makogonenko
Publikováno v:
Inorganic Materials. 36:1094-1097
GdxHg1-xSe (0
Publikováno v:
Journal of Applied Spectroscopy. 66:306-310
Transmission spectra of new fourfold semimagnetic semiconductors CdxHg1−x−yMnySe (x≤0.6; y≤0.01–0.1) at 77 and 300 K and the effect of annealing of them in vapors of the components on their optical properties were investigated. It is shown
Publikováno v:
Semiconductors. 32:696-699
The electrical and galvanomagnetic properties of CdxHg1−xSe crystals (x=0.23) doped with iron in various concentrations are investigated in the temperature range 77–400 K and in magnetic fields up to 1.6 T. It is established that iron introduced
Autor:
O. S. Romanyuk, L. D. Paranchich, M. D. Andriichuk, V. I. Sichkovskii, R. N. Yurtsenyuk, V. N. Makogonenko, Yu. V. Tanasyuk, S. Yu. Paranchich
Publikováno v:
Inorganic Materials. 39:333-335
The effect of Bridgman growth conditions on the transport and optical properties of CdTe〈V〉 crystals with a vanadium concentration of 5 × 1025, 1025, and 5 × 1024 m–3 is studied.
Publikováno v:
Inorganic Materials. 37:564-566
CdxHg1 – xTe〈V〉 (x= 0.9–0.95) crystals were prepared by two versions of Bridgman growth, and their optical homogeneity and transport properties were studied. The electrical resistivity of the crystals was 104to 108 Ω m. From the temperature
Publikováno v:
Journal of Applied Spectroscopy. 63:293-295