Zobrazeno 1 - 10
of 21
pro vyhledávání: '"O. S. Litvin"'
Autor:
V. M. Katerynchuk, B. V. Kushnir, Z. R. Kudrynskyi, Z. D. Kovalyuk, I. G. Tkachuk, O. S. Litvin
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 507-510 (2017)
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide
Externí odkaz:
https://doaj.org/article/dfff7e335499418cb91dd3409808937e
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 507-510 (2017)
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::349579ea90271761e2559f528ca39bd6
http://journals.pu.if.ua/index.php/pcss/article/view/1232
http://journals.pu.if.ua/index.php/pcss/article/view/1232
Publikováno v:
Technical Physics. 59:1462-1465
We study the structure and magnetic properties of CoxInSe layered crystals electrochemically intercalated by cobalt in a constant magnetic field. It is found that impurity clusters consisting of cobalt nano-particles with the fcc structure are formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa37b2581aaac1568899e7888a21a33
https://doi.org/10.1134/s1063784214100107
https://doi.org/10.1134/s1063784214100107
Autor:
L. V. Zavyalova, G. S. Svechnikov, N. P. Tatyanenko, O. S. Litvin, V. L. Gromashevskii, V. S. Khomchenko, N. N. Roshchina, V. V. Strelchuk, Boris A. Snopok, E. A. Avramenko
Publikováno v:
Technical Physics. 59:93-101
Zinc sulfide and zinc oxide films are produced by the pyrolysis of organometallic compounds (MOCVD technique). The objects of investigation are the phase composition, structure, surface topology, and the optical and piezoelectric properties of the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20ea9ee627d696dc6371821a80034e05
https://doi.org/10.1134/s1063784214010071
https://doi.org/10.1134/s1063784214010071
Autor:
N. A. Semenenko, V. S. Khomchenko, V. P. Sobolevskii, G. P. Ol’khovik, N. V. Sopinskii, A. A. Evtukh, A. K. Savin, O. S. Litvin
Publikováno v:
Technical Physics. 56:1665-1669
The properties of low-refractive-index carbon films obtained by close-spaced vapor transport at graphite sublimation are studied. The optical properties of the films are investigated by monochromatic multiple-angle ellipsometry, and their morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8687e2d38a927f22980113779a9e07c
https://doi.org/10.1134/s1063784211110259
https://doi.org/10.1134/s1063784211110259
Publikováno v:
Physics of the Solid State. 53:2154-2159
The morphology of nanostructures, which were grown on the (0001) van der Waals surface of layered GaSe crystals and annealed under thermodynamically equilibrium conditions at high pressures of sulfur vapor, has been investigated using atomic force mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68bbbe7a7a5a23275b2fa6674615f0bc
https://doi.org/10.1134/s1063783411100040
https://doi.org/10.1134/s1063783411100040
Autor:
Z. L. Denisova, O. S. Litvin, N. V. Sopinskii, N. A. Vlasenko, M. A. Mukhlyo, L. I. Veligura, E. G. Gule, P. F. Oleksenko
Publikováno v:
Semiconductors. 45:587-592
The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine the energy band diagram at the c-Si-SiOx interface and the changes in the electronic states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faaa29d7dbaeecb10391fc29daf70ed7
https://doi.org/10.1134/s1063782611050289
https://doi.org/10.1134/s1063782611050289
Autor:
Ts. A. Kryskov, M. P. Kisselyuk, O. S. Litvin, I. V. Kruglenko, M. S. Zayats, O. I. Vlasenko, M. V. Vuychik, P. O. Gentsar
Publikováno v:
Semiconductors. 44:1012-1015
Morphological and optical studies (ellipsometry and reflectance spectroscopy in the ranges 400–750 nm and 1.4–25 μm) of thin GaSe films fabricated by thermal evaporation on the n-Si (111) single-crystal substrates are reported. The film thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7bc8426becef1667b3242dc46e391ab
https://doi.org/10.1134/s1063782610080099
https://doi.org/10.1134/s1063782610080099
Size effects in the internal reflection in gold cluster films in polarization modulation experiments
Autor:
L. S. Maksimenko, S. P. Rudenko, B. K. Serdega, I. E. Matyash, O. S. Litvin, L. I. Berezhinskiĭ
Publikováno v:
Optics and Spectroscopy. 107:264-269
The internal reflection in gold nanocluster films in the Kretschmann geometry is studied using polarization modulation of electromagnetic radiation. The reflection coefficients Rs and Rp for s- and p-polarized light, respectively, as well as their di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b249ecf74c44de9322d173fddb278e9
https://doi.org/10.1134/s0030400x09080165
https://doi.org/10.1134/s0030400x09080165
Autor:
A. V. Stronski, M. V. Vuychik, V. G. Boiko, N. S. Zayats, P. O. Gentsar, O. S. Litvin, I.B. Yanchuk
Publikováno v:
Semiconductors. 43:590-593
Morphological and optical studies of the Si-doped GaN films (doping level NSi = 1.5 × 1019 cm−3) grown by vapor-phase epitaxy from metalorganic compounds on a sapphire substrate oriented along the c axis are conducted. For the grown GaN films, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98383d57d910c3ee6cb02e05e9fdeab3
https://doi.org/10.1134/s106378260905008x
https://doi.org/10.1134/s106378260905008x