Zobrazeno 1 - 10
of 18
pro vyhledávání: '"O. S. El'tsina"'
Autor:
O. S. El’tsina, L. V. Belyakov, Olga M. Sreseli, E. I. Terukov, A. V. Kukin, J. S. Vainshtein, O. I. Kon’kov
Publikováno v:
Semiconductors. 45:302-305
Hydrogenated amorphous silicon layers with crystalline nanoparticles have been produced by plasma-enhanced chemical vapor deposition, with tetrafluorosilane added to the gas mixture. The photoluminescence kinetics and photoelectric properties of stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2abb0db490561c70e184c1ccb4f0da0e
https://doi.org/10.1134/s1063782611030225
https://doi.org/10.1134/s1063782611030225
Autor:
D. N. Goryachev, O. S. El’tsina, L. V. Belyakov, A. D. Remenyuk, Olga M. Sreseli, T. K. Zvonareva, Vladimir A. Tolmachev, A. A. Nechitaĭlov
Publikováno v:
Semiconductors. 42:1249-1254
Catalytic properties of composite amorphous carbon-platinum layers produced by magnetron cosputtering have been studied. The layers were characterized by electron microscopy, IR spectroscopy, ellipsometry, gravimetry, and spectrophotometric chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f1b886f9907e6eff4ffd85e50ecc45
https://doi.org/10.1134/s1063782608100199
https://doi.org/10.1134/s1063782608100199
Publikováno v:
Applied Physics Letters. 95:031914
Photocurrent efficiency (ratio of the number of photogenerated carriers to the number of absorbed photons) of Au/por-Si/p-Si structure in a wide spectral range was investigated. The low-energy edge of nanoporous silicon (por-Si) sensibility was deter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc165e11d8cde9b28c20700ebc928cd9
https://doi.org/10.1063/1.3186785
https://doi.org/10.1063/1.3186785
Autor:
Terekhov, V.1 ftt@phys.vsu.ru, Terukov, E.2, Undalov, Yu.2, Parinova, E.1, Spirin, D.1, Seredin, P.1, Minakov, D.1, Domashevskaya, E.1
Publikováno v:
Semiconductors. Feb2016, Vol. 50 Issue 2, p212-216. 5p.
Publikováno v:
Semiconductors. Feb2013, Vol. 47 Issue 2, p183-202. 20p.
Autor:
Vainshtein, J.1 julvain@gmail.com, Kon'kov, O.1, Kukin, A.1, El'tsina, O.1, Belyakov, L.1, Terukov, E.1, Sreseli, O.1
Publikováno v:
Semiconductors. Mar2011, Vol. 45 Issue 3, p302-305. 4p.
Autor:
Remenyuk, A. D.1 arem@mail.ioffe.ru, Zvonareva, T. K.1, Serenkov, I. T.1, Sakharov, V. I.1, Perova, T. S.2, Wasyluk, J.2
Publikováno v:
Semiconductors. Aug2010, Vol. 44 Issue 8, p1074-1079. 6p. 2 Charts, 5 Graphs.
Autor:
Remenyuk, A. D.1 arem@mail.ioffe.ru, Zvonareva, T. K.1, Zaharova, I. B.1, Tolmachev, V. A.1, Belyakov, L. V.1, Perova, T. S.1
Publikováno v:
Semiconductors. Jul2009, Vol. 43 Issue 7, p915-920. 6p. 3 Charts, 3 Graphs.
Autor:
Nechitaĭlov, A.1 aan.shuv@mail.ioffe.ru, Zvonareva, T.1, Remenyuk, A.1, Tolmachev, V.1, Goryachev, D.1, El’tsina, O.1, Belyakov, L.1, Sreseli, O.1
Publikováno v:
Semiconductors. Oct2008, Vol. 42 Issue 10, p1249-1254. 6p. 1 Diagram, 1 Chart, 6 Graphs.
Autor:
El’tsina, O. S.1, Goryachev, D. N.1, Nechitaĭlov, A. A.1 olga.sreseli@mail.ioffe.ru, Sreseli, O. M.1 olga.sreseli@mail.ioffe.ru
Publikováno v:
Technical Physics Letters. Aug2008, Vol. 34 Issue 8, p696-698. 3p. 1 Chart, 2 Graphs.