Zobrazeno 1 - 10
of 21
pro vyhledávání: '"O. Quittard"'
Publikováno v:
Microelectronics Reliability. :510-513
The IGCT (Integrated Gate Commutated Thyristor) was launched as a new power semiconductor device 20 years ago, using design features where only few reference was available at that time. Especially the gate path that needs to take the full principal c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eedcc87c9256571afce83846d1e39267
https://doi.org/10.1016/j.microrel.2018.07.079
https://doi.org/10.1016/j.microrel.2018.07.079
Publikováno v:
IEEE Transactions on Nuclear Science. 47:641-646
Application of high voltage electrical stresses to NVDMOSFET-type COTS transistors was explored as an original hardening option. Such pre-irradiation treatment enhances transistor response to total dose.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e7ac68718ca0ec6340f8fcaadd71495
https://doi.org/10.1109/23.856492
https://doi.org/10.1109/23.856492
Autor:
O. Quittard, H. van Zwol, P. de Jong, T. Keller, Fabrice Blanc, Guido Notermans, Z. Mrcarica, Theo Smedes, Anco Heringa
Publikováno v:
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
Electrical measurements, physical damage analysis, and device simulation have proved that the drain junction breakdown voltage is the determining failure criterion for our HV active clamps. Using this criterion, the HBM and TLP robustness of such cla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dd8e67b168c364ba17da936daa3d545
https://doi.org/10.1109/eosesd.2007.4401730
https://doi.org/10.1109/eosesd.2007.4401730
Autor:
C. Brisset, F. Joffre, Alain Hoffmann, C. Picard, O. Quittard, Jean-Pierre Charles, M. Marceau
Publikováno v:
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).
This study explores the effectiveness of pre-irradiation as a hardening technique for COTS components used in electronic power systems. This technique greatly improves the radiation tolerance of VDMOSFETs in such systems, whereby a small change in R/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c7a3ed585546854295017a7254c474f
https://doi.org/10.1109/radecs.1999.858604
https://doi.org/10.1109/radecs.1999.858604
Autor:
O. Quittard, C. Brisset, Coumar Oudea, J. Gasiot, Laurent Dusseau, Frédéric Saigné, J. Fesquet, F. Joffre
Publikováno v:
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).
Use of isochronal annealing enabled us to elucidate the recombination and compensation processes that contribute to the radiation-induced charge neutralization (RICN) mechanism.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d39edcc8edd18f486897a52c2a1f9fcd
https://doi.org/10.1109/radecs.1999.858634
https://doi.org/10.1109/radecs.1999.858634
Autor:
J. Gasiot, I. Fesquet, Frédéric Saigné, Laurent Dusseau, F. Joffre, C. Brisset, Coumar Oudea, O. Quittard
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 1999, 46 (6), pp.1633-1639. ⟨10.1109/23.819132⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 1999, 46 (6), pp.1633-1639. ⟨10.1109/23.819132⟩
Irradiation of electronic devices has varying impact on their electrical characteristics, according to the concomitant bias scenario. Under bias, there is a process of continuous degradation; but recovery will occur if subsequent irradiation is perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c128d96d803efbfd1dab315f7bca31e
https://hal.archives-ouvertes.fr/hal-01801613
https://hal.archives-ouvertes.fr/hal-01801613
Publikováno v:
Conference IEEE-NSREC98
Conference IEEE-NSREC98, 1998, Newport Beach, United States
Conference IEEE-NSREC98, 1998, Newport Beach, United States
The effects of input bias on the sensitivity to cumulative dose effects of 144 commercial CMOS inverters have been studied. The "worst case" irradiation conditions, as well as the most favorable case, have been inferred from these data. A saturation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ca821a2678aa91230742ee4cc82f2e0
https://hal.archives-ouvertes.fr/hal-02016315
https://hal.archives-ouvertes.fr/hal-02016315
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