Zobrazeno 1 - 10
of 23
pro vyhledávání: '"O. Pohland"'
Autor:
Emmanuel Terriac, Daniel A. D. Flormann, C. Anton, Franziska Lautenschlaeger, Lucina Kainka, Doriane Vesperini, Moritz Schu, Rhoda J. Hawkins, K. Kaub, G. Montalvo Bereau, M. O. Pohland, Andreas Janshoff
Adhesion induces dramatic morphological and mechanical changes to cells, which are reflected by changes to the actin cortex. Among the many different proteins involved in this sub-membranous layer, motor proteins (e.g., nonmuscle myosin II [NMII]) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13a6a2a3d5b009c9a3713006a92509a
https://doi.org/10.1101/2021.08.03.454901
https://doi.org/10.1101/2021.08.03.454901
Publikováno v:
Solid-State Electronics. 48:1175-1179
Leakage performance of BCPMOS (Buried channel PMOS) is investigated by experimentally varying the LDD implant conditions. An anomalous leakage increase with Boron LDD implant is observed for a small geometry (narrow and short) PMOS. Experimental resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f61431e89b80da3a0edafd9d7e22549
https://doi.org/10.1016/j.sse.2004.02.001
https://doi.org/10.1016/j.sse.2004.02.001
Publikováno v:
Surface Review and Letters. :559-566
Transmission electron microscopy is uniquely able to extend techniques for imaging free surface steps to the buried interface regime, without significant loss of detail. Two mechanisms for imaging surface and interfacial steps by transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40fe1f009630ed91fd4441193e2ab3eb
https://doi.org/10.1142/s0218625x97000547
https://doi.org/10.1142/s0218625x97000547
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1837-1842
Using diffraction contrast in a transmission electron microscope, we show that the subsurface strain around a monatomic step can be revealed on Si(111). The strain appears because small associated lattice plane rotations change the Bragg conditions l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::579977f6b024720326edd20c7bc312b2
https://doi.org/10.1116/1.578435
https://doi.org/10.1116/1.578435
Publikováno v:
ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005..
This paper demonstrates that the threshold voltages of CMOS transistors can vary significantly depending on their proximity to well boundary. This well proximity effect (WPE) is caused by the well implant atoms that scatter laterally from the photo-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d74d6cfc77c90bfed714aafc556e1589
https://doi.org/10.1109/issm.2005.1513333
https://doi.org/10.1109/issm.2005.1513333
Autor:
A. Chatila, D. Radaelli, S. Daniel, O. Pohland, Y.Z. Xu, Helmut Puchner, B. Jin, B. Bruggeman
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
A single poly, 0.15 /spl mu/m process has been modified to fabricate a 18 Mb fast synchronous memory for evaluation of the process impact on the a-particle SEU (single Event Upset) performance. The process options include (1)increasing the source/dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b61745cdf47cdc4e4c2aa411e61632
https://doi.org/10.1109/relphy.2004.1315340
https://doi.org/10.1109/relphy.2004.1315340
Publikováno v:
ISQED
The leakage performance of BCPMOS (buried channel PMOS) is investigated by experimentally varying the LDD implant conditions. An anomalous leakage increase with a boron LDD implant is observed for a small geometry (narrow and short) PMOS. Experimenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2cb1c3b37b252cd84df541d07848fec
https://doi.org/10.1109/isqed.2004.1283649
https://doi.org/10.1109/isqed.2004.1283649
Publikováno v:
Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710).
Source and drain junction capacitance has been varied by utilizing different implant conditions for the MOSFETs to explore the possibility of improving SEU (single event upset) immunity of SRAM cells. It is found. that the junction capacitances of bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ec003cd4142d2d272ef786145010ef
https://doi.org/10.1109/essderc.2003.1256932
https://doi.org/10.1109/essderc.2003.1256932
Publikováno v:
Physical review. B, Condensed matter. 49(19)
The asymptotic elastic-displacement field of a surface step is shown to result from a planar force distribution which is composed of two point elastic dipoles, one oriented along the surface of arbitrary magnitude and one normal to the surface with d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b56ce41456306850646323c59de4f47
https://pubmed.ncbi.nlm.nih.gov/10010332
https://pubmed.ncbi.nlm.nih.gov/10010332
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