Zobrazeno 1 - 10
of 45
pro vyhledávání: '"O. Patard"'
Publikováno v:
AIP Advances, Vol 1, Iss 3, Pp 032165-032165-5 (2011)
We have fabricated InP-based coherent quantum cascade laser micro-stripe arrays. Phase-locking is provided by evanescent coupling between adjacent stripes. Stripes are buried into semi-insulating iron doped InP. Lasing at room temperature is obtained
Externí odkaz:
https://doaj.org/article/ded6e9c9060247df8d490e7914bb1c9e
Autor:
Yoan Bourlier, Arnaud Etcheberry, Piero Gamarra, Stéphane Piotrowicz, Sylvain Delage, O. Patard, Muriel Bouttemy, Mathieu Frégnaux
Publikováno v:
Surface and Interface Analysis
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Surface and Interface Analysis, Wiley-Blackwell, 2020, 52 (12), pp.914-918. ⟨10.1002/sia.6857⟩
unknow
Surface and Interface Analysis, Wiley-Blackwell, 2020, 52 (12), pp.914-918. ⟨10.1002/sia.6857⟩
International audience; During high-electron-mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heteros
Autor:
Eric Chartier, Piero Gamarra, Cedric Lacam, P. Altuntas, D. Lancereau, M. Oualli, O. Patard, C. Potier, L. Teisseire, Christian Dua, Stéphane Piotrowicz, J.C. Jacquet, Sylvain Delage
Publikováno v:
Microelectronics Reliability. :418-422
On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper la
Autor:
Stéphane Piotrowicz, N. Michel, M. Oualli, Eric Chartier, Jean-Claude Jacquet, O. Patard, Cedric Lacam, C. Potier, Christian Dua, Piero Gamarra, Philippe Altuntas, Sylvain Delage
Publikováno v:
International Journal of Microwave and Wireless Technologies. 10:39-46
This paper presents performances achieved with InAlGaN/GaN HEMTs with 0.15 µm gate length on SiC substrate. Technology Computer Aided Design simulations were used to optimize the heterostructure. Special attention was paid to the design of the buffe
Autor:
Stéphane Piotrowicz, Mohamed Bouslama, C. Potier, Christophe Chang, Vincent Gillet, O. Patard, J-C. Nallatamby, Raymond Quéré, Michel Prigent
Publikováno v:
2019 49th European Microwave Conference (EuMC)
2019 49th European Microwave Conference (EuMC), Oct 2019, Paris, France. pp.567-570, ⟨10.23919/EuMC.2019.8910734⟩
2019 49th European Microwave Conference (EuMC), Oct 2019, Paris, France. pp.567-570, ⟨10.23919/EuMC.2019.8910734⟩
In this paper, the linearity and efficiency of 2 different technologies of HEMT transistors (AlGaN/GaN and InAlGaN/GaN) has been performed using multi-tone large signal measurement in C-band. The transistors size is 8x50µm with 0.15µm gate length.
Autor:
J.C. Jacquet, Piero Gamarra, Eric Chartier, Stéphane Piotrowicz, Sylvain Delage, C. Potier, M. Oualli, N. Michel, P. Altuntas, Christian Dua, Michel Prigent, Jean-Christophe Nallatamby, Cedric Lacam, O. Patard
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC)
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩
This article presents the performances obtained on a $0.15 \mu \mathrm{m}$ gate length InAlGaN/GaN HEMT technology on SiC substrate. This technology uses a back-barrier buffer layer to ensure the confinement of electrons in the channel, which minimiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5766b9bd9074cac30bff4ad98d06099b
https://hal.archives-ouvertes.fr/hal-02460407
https://hal.archives-ouvertes.fr/hal-02460407
Autor:
J. Gruenenpuett, Piero Gamarra, Stéphane Piotrowicz, Eric Chartier, J.C. Jacquet, N. Michel, M. Oualli, Sylvain Delage, Christian Dua, Cedric Lacam, P. Altuntas, L. Trinh-Xuan, O. Patard, Christophe Chang, C. Potier
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a sa
Autor:
P. Altuntas, Jorge Pereira, O. Patard, Christophe Gaquiere, Piero Gamarra, Sylvain Delage, Nicolas Defrance, N. Michel, Jean-Claude De Jaeger, Cedric Lacam, Sébastien Aroulanda
Publikováno v:
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2019, 37 (4), pp.041001. ⟨10.1116/1.5090106⟩
Journal of Vacuum Science & Technology A, 2019, 37 (4), pp.041001. ⟨10.1116/1.5090106⟩
International audience; This paper reports on atomic layer etching of several III-N materials such as GaN, AlN, AlGaN, and InAlGaN based on a sequential surface modification by chlorine adsorption followed by a low energy Ar plasma exposure to remove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82e5b125c6148c2243b73272d1235c15
https://hal.archives-ouvertes.fr/hal-03139113
https://hal.archives-ouvertes.fr/hal-03139113
Autor:
J.C. Jacquet, O. Patard, P. Altuntas, C. Dua, C. Potier, M. Oualli, Stéphane Piotrowicz, E. Chartier, N. Michel, J. Gruenenpuett, S. L. Delage, P. Gamarra, C. Lacam, Christophe Chang
Publikováno v:
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).
This paper presents the simulated results and first small-signal on-wafer measurements of two MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The two three-stages MMIC1 & MMIC2 are operating within a bandwi
Autor:
Didier Floriot, E. Charier, Stéphane Piotrowicz, J.C. Jacquet, N. Michel, Sylvain Delage, Hervé Blanck, M. Oualli, Christophe Chang, P. Altuntas, O. Patard, Christian Dua, Cedric Lacam, P. Fellon, C. Potier, Piero Gamarra
Publikováno v:
2018 22nd International Microwave and Radar Conference (MIKON).
Recent results obtained using InAlGaN/GaN HEMT technology. Material advantages of this heterostructure are depicted and some technological aspects are described. Low lagging effects and high electric field capability is presented. Power densities up