Zobrazeno 1 - 10
of 242
pro vyhledávání: '"O. Parillaud"'
Autor:
F. van Dijk, Michel Sotom, Leontios Stampoulidis, S. Snowden, J. P. Le Goëc, A. Le Kernec, Efstratios Kehayas, O. Parillaud, Mickael Faugeron, P. Henderson, Anaelle Maho, B. Benazet
Publikováno v:
International Conference on Space Optics — ICSO 2018.
This article reports the development of 200-mW 1.55-μm DFB laser module with RIN below -162 dB/Hz which are well suited for microwave photonics or free space optical communication applications. Specific design has allowed reaching high power (>300 m
Akademický článek
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Autor:
Michel Garcia, Y. Robert, Bruno Gérard, M. Lecomte, P. Resneau, Dmitri L. Boiko, M. Krakowski, O. Parillaud, Nicolas Torcheboeuf, Stefan Kundermann, Claire Theveneau, E. Vinet
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
European Space Agency (ESA) considers Mode-Locked Semi-Conductor Lasers as a promising technology for precision metrology systems in space such as High Accuracy Absolute Long Distance Measurement. We report our progress towards challenging ESA requir
Autor:
F. van Dijk, Alexandre Larrue, E. Vinet, Cecil Pham, M. Faugeron, A. Rissons, Yannick Robert, Michel Garcia, O. Parillaud
Publikováno v:
Free-Space Laser Communication and Atmospheric Propagation XXX.
Interest in free space optical communications has increased in the last decades as it has many advantages over RF communications, especially for space-borne applications. However, high power, good spectral quality and beam quality are needed for effi
Autor:
Antonio Consoli, M. Vilera, O. Parillaud, Peppino Primiani, F. van Dijk, M. Faugeron, Eric Vinet, J. M. G. Tijero, J. P. Le Goëc, Yannick Robert, Michel Krakowski, I. Esquivias
Publikováno v:
International Conference on Space Optics — ICSO 2014.
Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact
Autor:
O. Parillaud, Yannick Deshayes, M. Lecomte, E. Vinet, Laurent Bechou, M. Garcia, R. Mostallino, Y. Robert, A. Larrue, M. Krakowski
Publikováno v:
2017 IEEE High Power Diode Lasers and Systems Conference (HPD).
This paper reports on thermal performance characterization of a new high power Distributed Feedback (DFB) laser diode technology for Yb, Er and Yb/Er doped fiber lasers requiring a very narrow and stable absorption line close to 975nm. The thermal re
Autor:
Jean-Luc Reverchon, Daniel Mathiot, Jean Decobert, Florian Le Goff, O. Parillaud, Jean-Pierre Le Goec
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
Nowadays short wavelength infrared (SWIR) imaging based on InP/InGaAs photo-diodes is quite popular for uncooled camera. The state of the art technology is a double layer planar heterointerface focal plane array [1]. But, it remains expensive and onl
Autor:
V. Ligeret, Laurent Lombez, Olivier Gilard, S. Bonnefont, Olivier Gauthier-Lafaye, Xavier Marie, F. Lozes-Dupuy, Delphine Lagarde, O.. Parillaud, Mathieu Boutillier, M. Krakowski
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2155-2159
We report on a novel method to measure radiation induced non radiative carrier lifetime modifications in laser diodes. This method is based on the conjugation of theoretical gain calculation, experimental gain measurements, and threshold variation me
Autor:
M.. Calligaro, Laurent Lombez, Delphine Lagarde, M. Krakowski, Olivier Gilard, Olivier Gauthier-Lafaye, Xavier Marie, S. Bonnefont, F. Lozes-Dupuy, Michel Lecomte, F.-J.. Vermersch, M. Boutillier, O.. Parillaud
Publikováno v:
IEEE Transactions on Nuclear Science. 54:1110-1114
852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 1014 up to 1016e-/cm2. Layers corresponding to the laser diodes materials were characterised using photoluminescence
Autor:
Frederic van Dijk, Eric Vinet, O. Parillaud, G. Kochem, Peppino Primiani, Mickael Faugeron, Jose Manuel G. Tijero, Martin Traub, Antonio Prez-Serrano, Jean-Pierre Le Goec, Yannick Robert, M. Vilera, Ignacio Esquivias, Michel Krakowski
Publikováno v:
IEEE Photonics Technology Letters, ISSN 1041-1135, 2015-05, Vol. 27, No. 13
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
We present the design and the performance of a monolithically integrated master oscillator power amplifier at 1.5 μm. The three-section device includes a distributed feedback laser, a modulation section, and a high power tapered amplifier. In order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16ddcd2f7d0b29d83deebf828c232485
https://publica.fraunhofer.de/handle/publica/240559
https://publica.fraunhofer.de/handle/publica/240559