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pro vyhledávání: '"O. P. Guschin"'
Autor:
A. V. Myakon’kikh, O. P. Guschin, A. A. Tatarintsev, K. Yu. Kuvaev, E. S. Gornev, Konstantin V. Rudenko, N. A. Orlikovskii
Publikováno v:
Russian Microelectronics. 47:323-331
The processes of plasma etching of stack layers to form a structure of a metal gate of a nanoscale transistor with a dielectric with a high level of dielectric permittivity (HkMG) are investigated. A resist mask formed by fine-resolution electron-bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6958bf596b9b1b5a7da9d4485c05b630
https://doi.org/10.1134/s1063739718050062
https://doi.org/10.1134/s1063739718050062
