Zobrazeno 1 - 10
of 28
pro vyhledávání: '"O. P. Agnihotri"'
Autor:
Ravinder Pal, Bin Gong, P. Srivastava, H. K. Sehgal, S. K. Jha, Hee Chul Lee, Anjali, O. P. Agnihotri
Publikováno v:
Journal of Electronic Materials. 32:899-905
Mercury cadmium telluride (Hg1−xCdxTe or MCT) has been commonly used in devices for infrared (IR) detection. For the optimum performance of the device, a compatible surface-passivation technology that provides long-term stability is required. Using
Publikováno v:
Semiconductor Science and Technology. 17:R11-R19
The tunable bandgap semiconductor mercury cadmium telluride (MCT) is by far the most efficient detector in the 3–5 μm mid-wave infrared (MWIR) and 8–14 μm long-wave infrared (LWIR) wave bands. It is the current material of choice for high-perfo
Autor:
Ravinder Pal, P. K. Basu, O. P. Agnihotri, P. K. Chaudhury, B. L. Sharma, Vishnu Gopal, Vikram Kumar
Publikováno v:
Journal of Electronic Materials. 30:103-108
Generation-recombination (g-r) processes in the passivant/HgCdTe interface region are shown to complicate the transient photoconductive (PC) decays. Anomalous PC decays showing delayed peaks are observed and modeled for the first time. These peaks ar
Publikováno v:
Semiconductor Science and Technology. 15:L11-L14
We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition,
Publikováno v:
Infrared Physics & Technology. 40:101-107
The variations in the responsivity, minority carrier lifetime and shunt resistance (arising due to surface accumulation) have been measured as a function of the gate potential in a HgCdTe gated photoconductor test structure. The measured variations h
Publikováno v:
Semiconductor Science and Technology. 11:231-237
The effect of fixed surface charge density on the performance of HgCdTe (MCT) photoconductive detectors is presented in this study. The figure of merit such as the specific detectivity of photoconductive detectors operating at 77 K is calculated with
Publikováno v:
Journal of Applied Physics. 72:3659-3663
Thin polycrystalline CuInSe2 films have been grown in a range of composition and deposited on the glass substrate by two‐source vacuum evaporation of CuInSe2 and Se powders. These films were annealed into H2S. The optical study shows an increase in
Publikováno v:
Applied Physics Letters. 77:1330-1332
We report on photon-induced modifications in CdTe/MCT (cadmium telluride/mercury cadmium telluride) heterostructure interfaces formed by flash evaporated CdTe on to the bulk p-Hg0.8Cd0.2Te. Metal–insulator–semiconductor (MIS) test structures were
Autor:
G. Aren, O. P. Agnihotri
Publikováno v:
Journal of Materials Science Letters. 12:1176-1177
Publikováno v:
Japanese Journal of Applied Physics. 40:6862
Using a double-tubed-coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. A high deposition rate of 1600 Å/s is achieve