Zobrazeno 1 - 10
of 72
pro vyhledávání: '"O. Noblanc"'
Autor:
J. S. Steckel, E. Josse, A. G. Pattantyus-Abraham, M. Bidaud, B. Mortini, H. Bilgen, O. Arnaud, S. Allegret-Maret, F. Saguin, L. Mazet, S. Lhostis, T. Berger, K. Haxaire, L. L. Chapelon, L. Parmigiani, P. Gouraud, M. Brihoum, P. Bar, M. Guillermet, S. Favreau, R. Duru, J. Fantuz, S. Ricq, D. Ney, I. Hammad, D. Roy, A. Arnaud, B. Vianne, G. Nayak, N. Virollet, V. Farys, P. Malinge, A. Tournier, F. Lalanne, A. Crocherie, J. Galvier, S. Rabary, O. Noblanc, H. Wehbe-Alause, S. Acharya, A. Singh, J. Meitzner, D. Aher, H. Yang, J. Romero, B. Chen, C. Hsu, K. C. Cheng, Y. Chang, M. Sarmiento, C. Grange, E. Mazaleyrat, K. Rochereau
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ba7ab2beceb487279311b475596647
https://doi.org/10.1109/iedm19574.2021.9720560
https://doi.org/10.1109/iedm19574.2021.9720560
Autor:
Clement Tavernier, O. Nier, M. Casse, Frederic Monsieur, Michel Haond, J-C. Barbe, Herve Jaouen, Joris Lacord, O. Noblanc, G. Torrente, Yann-Michel Niquet, F.G. Pereira, François Triozon, M-A. Jaud, Denis Rideau
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, France. pp.4-7
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, France. pp.4-7
This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0adb70c733cb62a8e2cee16b0e311542
https://hal.science/hal-02138897
https://hal.science/hal-02138897
Publikováno v:
Microelectronic Engineering. 55:369-374
Schottky contacts are investigated on n-type 4H-SiC by electrical measurements and microstructural analyses to understand the behaviour of such a barrier. Titanium and tungsten were deposited after RCA cleaning as surface preparation of SiC. Electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dde7605eb48960c99a37d0036853abc
https://doi.org/10.1016/s0167-9317(00)00469-x
https://doi.org/10.1016/s0167-9317(00)00469-x
Publikováno v:
IEEE Transactions on Nuclear Science. 47:598-603
This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f77d0d3c35e3d088e411f3f24f967e1e
https://doi.org/10.1109/23.856486
https://doi.org/10.1109/23.856486
Autor:
Anelia Kakanakova-Georgieva, C. Arnodo, O. Noblanc, S. Cassette, Roumen Kakanakov, Ts. Marinova, C. Brylinski, Liliana Kassamakova
Publikováno v:
Applied Surface Science. 151:225-232
The interface chemistry of WN/4H–SiC structures has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS investigations have been performed on as deposited, 800°C and 1200°C annealed (4 min) samples. The as deposited and 800°C an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f1558d317e539c108e9bda1d60fc557
https://doi.org/10.1016/s0169-4332(99)00277-9
https://doi.org/10.1016/s0169-4332(99)00277-9
Publikováno v:
Thin Solid Films. :637-641
The interface chemistry of nickel and tungsten based contacts on SiC has been investigated by XPS on as-deposited samples and after contact formation. After annealing at 950 °C for 10 min, Ni/SiC and Ni/Si/SiC ohmic contacts are formed due to the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c7a0d4962b3ae7082b29cd8e7ec2b8
https://doi.org/10.1016/s0040-6090(98)01668-x
https://doi.org/10.1016/s0040-6090(98)01668-x
Publikováno v:
Thin Solid Films. 337:180-183
Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC structures are characterized by intense interface reactions leading to tungsten carbide and tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24726271fc8bcf453a01c61d48f7805
https://doi.org/10.1016/s0040-6090(98)01199-7
https://doi.org/10.1016/s0040-6090(98)01199-7
Autor:
S. Cassette, Tz Djambova, Ivan Kassamakov, Ts. Marinova, Christian Brylinski, Anelia Kakanakova-Georgieva, C. Arnodo, Liliana Kassamakova, Roumen Kakanakov, O. Noblanc
Publikováno v:
Semiconductor Science and Technology. 13:1025-1030
The electrical properties and interface chemistry of Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC have been investigated with respect to their utilization for MESFETs operated at high temperatures. The electrical properties of these contacts were s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b43b39cdc66d3054a622f55e396a8fb
https://doi.org/10.1088/0268-1242/13/9/010
https://doi.org/10.1088/0268-1242/13/9/010
Autor:
Anelia Kakanakova-Georgieva, C. Brylinski, Attila Sulyok, Ts. Marinova, György Radnóczi, Roumen Kakanakov, C. Arnodo, Béla Pécz, O. Noblanc, S. Cassette, Liliana Kassamakova
Publikováno v:
Materials Science Forum. :817-820
WN has been deposited by reactive sputtering on 4H-SiC to make Schottky rectifiers. The physical properties of the interface have been studied by XPS and TEM for as-deposited, 800 and 1200 C annealed samples. The two former samples reveal steep inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5594565b392e750575a19038340d46
https://doi.org/10.4028/www.scientific.net/msf.264-268.817
https://doi.org/10.4028/www.scientific.net/msf.264-268.817
Publikováno v:
Applied Surface Science. :208-212
X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical reactions and diffusion processes at Ti/Au/Pt/Ti/SiC interfaces for as deposited and annealed at 575°C for 10 min structures. The distribution of the elements and the change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e181e18214ddc01383615e2608bff530
https://doi.org/10.1016/s0169-4332(97)00290-0
https://doi.org/10.1016/s0169-4332(97)00290-0