Zobrazeno 1 - 10
of 15
pro vyhledávání: '"O. N. Chugai"'
Autor:
R. V. Zaitsev, M. V. Kirichenko, G. S. Khrypunov, L. V. Zaitseva, O. N. Chugai, A. A. Drozdova
Publikováno v:
Electrical engineering & Electromechanics, Iss 6, Pp 70-75 (2019)
Based on experimental study and computer modeling of working temperature influence on the efficiency of Chinese production silicon solar cells identified temperature dependence of efficiency shows the feasibility of using Chinese production Si-SC in
Externí odkaz:
https://doaj.org/article/ea9f27e4c15f43feb22ecf66c80e3ecc
Autor:
Igor S. Terzin, S. L. Abashin, D. P. Zherebyat’ev, O. N. Chugai, E. A. Zhuk, A. A. Poluboyarov, A. V. Gaidachuk, Yu. A. Yatsyna, S. V. Sulima
Publikováno v:
Inorganic Materials. 51:972-977
We have studied spatial variations in the components of the low-frequency dielectric permittivity and the composition of Cd1–xZnxTe (x = 0.05–0.15) crystals. The real and imaginary parts of the permittivity have been shown to correlate with the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1a0602f58293a7858bbfb217f31f59
https://doi.org/10.1134/s0020168515100052
https://doi.org/10.1134/s0020168515100052
Autor:
D. P. Nalivaiko, O. V. Podshivalova, S. V. Oleinik, Andrey S. Gerasimenko, V. K. Komar, T. N. Novokhatskaya, S. V. Sulima, O. N. Chugai
Publikováno v:
Physics of the Solid State. 55:60-63
The frequency and temperature dependences of the real and imaginary parts of the permittivity of Cr-doped (nCr ≅ 1018 cm−3) melt-grown ZnSe crystals have been measured in the low-frequency region. It has been established that such doping reduces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd0ff7ee309c052f4a06836a97828466
https://doi.org/10.1134/s1063783413010113
https://doi.org/10.1134/s1063783413010113
Autor:
M. A. Rom, D. P. Nalyvaiko, O. N. Chugai, V. M. Puzikov, V. K. Komar, S. L. Abashin, S. V. Sulima, S. V. Oleynick
Publikováno v:
Telecommunications and Radio Engineering. 70:1203-1215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf0560bb786989fdcd13cac3e545f8a
https://doi.org/10.1615/telecomradeng.v70.i13.80
https://doi.org/10.1615/telecomradeng.v70.i13.80
Publikováno v:
Semiconductors. 41:689-695
Spectral dependences of effective values of the real and imaginary parts of the low-frequency permittivity of the Cd1−xZnxTe crystals (x=0.12–0.16) with the Schottky barrier fabricated on the surface are measured. It is found that the boundary wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb044f1e3492423250a029945a0e6cf
https://doi.org/10.1134/s1063782607060140
https://doi.org/10.1134/s1063782607060140
Publikováno v:
IEEE Transactions on Nuclear Science. 52:1945-1950
Uniformity of properties of a semiconductor material is one of the important conditions to achieve high spectrometric performance of ionizing radiation detectors. To study uniformity of electrophysical properties of crystals, an original method for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045fd3b5206177b2b89c5274116c9603
https://doi.org/10.1109/tns.2005.856769
https://doi.org/10.1109/tns.2005.856769
Autor:
V. K. Komar, E. V. Eseleva, V. P. Migal, O. V. Naumenko, O. N. Chugai, S. V. Sulima, S. L. Abashin
Publikováno v:
Inorganic Materials. 40:344-348
The spectrum and mode shapes of the natural elastic vibrations of disk-shaped ZnSe crystals are studied. Twin modes are identified which are closely related to the stress-strain state of the material.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00b21b1dd75d6bef99844d21c568577f
https://doi.org/10.1023/b:inma.0000023952.97562.da
https://doi.org/10.1023/b:inma.0000023952.97562.da
Autor:
Andrey S. Gerasimenko, S. V. Sulima, V. K. Komar, D. P. Nalivaiko, V. P. Migal, S. V. Oleinik, O. N. Chugai
Publikováno v:
Inorganic Materials. 41:229-231
Data are presented on the spectral dependence of steady-state photoconductivity for Cd1 - xZnxTe (x = 0.12–0.15) crystals grown under different conditions. The results indicate that the full width at half maximum of the near-edge photoconductivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa592bdd191c57bd86201e67c94faa6f
https://doi.org/10.1007/s10789-005-0113-1
https://doi.org/10.1007/s10789-005-0113-1
Publikováno v:
Applied Physics Letters. 81:4195-4197
A method of scanning photodielectric spectroscopy of crystals has been suggested. It is based on the measurements of small increments of the real Δe′ and imaginary Δe″ parts of effective dielectric permittivity at a smooth variation of the phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c8e2a83890ff175504e40111617fddb
https://doi.org/10.1063/1.1525883
https://doi.org/10.1063/1.1525883
Publikováno v:
Inorganic Materials. 37:449-451
The real (e") and imaginary (e"") parts of the complex dielectric permittivity of Cd1 – xZn x Te (x= 0.1–0.2) crystals are measured as a function of temperature and frequency. The e""-vs.-temperature data show a maximum, and e" rises rapidly at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da49fa928a865330e2d255415d53ae1a
https://doi.org/10.1023/a:1017512430316
https://doi.org/10.1023/a:1017512430316