Zobrazeno 1 - 10
of 19
pro vyhledávání: '"O. M. Khreis"'
Autor:
O M Khreis
Inter-mixing in a hypothetical InGaAs/GaAsP multi-quantum vertical cavity surface emitting laser (VCSEL) designed for emission at 980 nm has been mathematically modeled and analyzed. The solution to the diffusion equation using a combined superpositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9937fb5cb7e7527ec831240ade0027d9
https://doi.org/10.21203/rs.3.rs-2715344/v1
https://doi.org/10.21203/rs.3.rs-2715344/v1
Autor:
Ammar Elhassan, O. M. Khreis
Publikováno v:
Optical and Quantum Electronics. 45:937-946
On the basis of the coupled-mode theory, we have been able to successfully model and analyse the effect of intermixing on important optical properties of semiconductor distributed Bragg reflectors (DBRs). An expression for the coupling coefficient $$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d70716da2fe1b6c72fa48d13860a1ecd
https://doi.org/10.1007/s11082-013-9701-5
https://doi.org/10.1007/s11082-013-9701-5
Publikováno v:
2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA).
An error-function analytical expression describing compositional grading in a 850 nm AlGaAs/GaAs top-emitting oxide confined vertical cavity surface emitting laser has been derived. Results are presented showing that the optical properties of the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3196d8a11a4d41c4324ab5d3585756f6
https://doi.org/10.1109/icedsa.2016.7818554
https://doi.org/10.1109/icedsa.2016.7818554
Publikováno v:
2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA).
850-nm vertical-cavity laser diodes with copper-plated heat sinks were fabricated and tested. Vertical-cavity surface-emitting lasers with 10μm aperture diameter and 4μm of electroplated copper demonstrated a maximum −3dB modulation bandwidth of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89807a8efee3606b2137b7952b67d45f
https://doi.org/10.1109/icedsa.2016.7818469
https://doi.org/10.1109/icedsa.2016.7818469
Autor:
O. M. Khreis, A. N. Al-Omari
Publikováno v:
Optical and Quantum Electronics. 48
The effect of intermixing on some important optical properties of vertical cavity surface emitting lasers (VCSELs) has been successfully modeled and analyzed. A combined superposition of the error function solution to the diffusion equation for a hyp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c67f7f5798a8b7d2e21970d06eac467b
https://doi.org/10.1007/s11082-016-0655-2
https://doi.org/10.1007/s11082-016-0655-2
Autor:
O. M. Khreis
Publikováno v:
Superlattices and Microstructures. 52:913-920
The effect of interdiffusion on some important optical properties of semiconductor distributed Bragg reflectors (DBRs) has been successfully modeled by simple analytical expressions. An analytical expression for the coupling coefficient κ was derive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72cf60347c9c78d032523e74fe9a700b
https://doi.org/10.1016/j.spmi.2012.07.022
https://doi.org/10.1016/j.spmi.2012.07.022
A genetic algorithm analysis of photoluminescence experimental data from interdiffused quantum wells
Autor:
I.S. Al-Kofahi, O. M. Khreis
Publikováno v:
Superlattices and Microstructures. 37:193-201
The genetic algorithm method has been applied to analyze experimental photoluminescence data from interdiffused quantum well heterostructures. It has been shown that this method offers a direct determination of the interdiffusion activation energy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64589150feba9192ebac690a5d8633dc
https://doi.org/10.1016/j.spmi.2004.12.002
https://doi.org/10.1016/j.spmi.2004.12.002
Autor:
O. M. Khreis, I.S. Al-Kofahi
Publikováno v:
Semiconductor Science and Technology. 20:320-325
Photoluminescence experimental data from interdiffused undoped single quantum wells of GaAsSb/GaAs and InGaAs/GaAs have been analysed using a genetic algorithm method. A direct determination of the interdiffusion parameters without the need for the A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02498b0e63e8e7d8f370fa0371c96274
https://doi.org/10.1088/0268-1242/20/3/012
https://doi.org/10.1088/0268-1242/20/3/012
Autor:
O. M. Khreis
Publikováno v:
Solid State Communications. 132:767-771
The effect of strain on the interdiffusion in GaAsSb/GaAs and InGaAs/GaAs quantum wells has been studied. It is shown that photoluminescence peak shift due to interdiffusion between atoms in the wells and barriers versus anneal time can be modeled us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ab84487331ff52eaee5ce2feaa47fdd
https://doi.org/10.1016/j.ssc.2004.09.036
https://doi.org/10.1016/j.ssc.2004.09.036
Publikováno v:
Organic Electronics. 2:45-51
We have demonstrated a ytterbium tris (8-hydroxyquinoline) based organic light emitting device giving sharp electroluminescence at ∼980 nm, and demonstrated that it is not a requirement to match the energy of excitons formed on the organic ligands
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8603e5544ff34a96a5830615994b23d
https://doi.org/10.1016/s1566-1199(00)00014-8
https://doi.org/10.1016/s1566-1199(00)00014-8