Zobrazeno 1 - 10
of 14
pro vyhledávání: '"O. M. Ivleva"'
Publikováno v:
Soviet Physics Journal. 35:20-26
The manganese doping of In1−xGaxAsyP1-y(0 ≦ y ≦ 1) films grown by liquid-phase epitaxy has been investigated. A study has been made of the influence of the solid-solution composition and of the method of introducing the manganese into the solut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9bfb06a31bd6369f2d0ff49cc2d2b1c
https://doi.org/10.1007/bf01324978
https://doi.org/10.1007/bf01324978
Autor:
M. V. Turshatova, M. D. Vilisova, I. A. Bobrovnikova, O. M. Ivleva, V. A. Moskovkin, L. P. Porokhovnichenko
Publikováno v:
Soviet Physics Journal. 32:44-48
The influence of annealing at a temperature of 750–830°C on the electrophysical, luminescent, and structural characteristics of GaAs layers doped with various concentrations of tin is studied. It is shown that, for low doping levels, the layers po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c3ee419e10ccc3162dab4bc84a9211
https://doi.org/10.1007/bf00896733
https://doi.org/10.1007/bf00896733
Publikováno v:
Soviet Physics Journal. 25:89-92
We describe a method for growing epitaxial layers of zinc sulfide and cadmium sulfide solid solutions on the A-side of GaAs (111) by means of separated sulfide sources in an open hydrogen iodide system. The effects of substrate temperature, amount of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a79796100347de91af349ceb5f2d1c6
https://doi.org/10.1007/bf00897155
https://doi.org/10.1007/bf00897155
Publikováno v:
Soviet Physics Journal. 31:73-77
Studies have been carried out on the perfection of then-AlxGa1−xSb1−yAsy (0.12⩽x⩽0.26) layer grown on GaSb substrates under different conditions of lattice matching. During the relaxation of the mechanical stresses at first a system of tilt d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39f8673a53fe271d91b3cba87a842b7a
https://doi.org/10.1007/bf00896692
https://doi.org/10.1007/bf00896692
Autor:
I. D. Romanova, M. P. Yakubenya, V. S. Morozov, L. Yu. Potakhova, N. K. Maksimova, A. M. Misik, O. M. Ivleva, V. P. Yanovskii
Publikováno v:
Soviet Physics Journal. 30:131-136
Studies were made of heat-treated Ni-GaAs contacts, at which, prior to the electrochemical deposition of nickel, thin layers of gallium or arsenic were deposited. The physicochemical reactions at the interfaces were investigated, as well as the elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a68464bf9cfd3a2e5916b9683b54a9c
https://doi.org/10.1007/bf00898151
https://doi.org/10.1007/bf00898151
Publikováno v:
Soviet Physics Journal. 19:726-730
The dependence of growth rate, morphology, and structure of epitaxial layers of gallium arsenide on initial supersaturation conditions were investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca444cf742da63220e7d21f2c7c56175
https://doi.org/10.1007/bf00943469
https://doi.org/10.1007/bf00943469
Autor:
R. A. Vafin, M. I. Bashmakova, V. A. Romanchenko, E. V. Borovko, L. A. Levshuk, E. V. Chikin, D. N. Kachevskii, V. I. Berezin, Yu. I. Nedranets, V. P. Sevost'yanov, G. M. Ikonnikova, O. M. Ivleva, L. E. Popov, N. A. Koneva, L. A. Teplyakova, V. Ya. �pp, A. F. Medvedev, M. M. Nikitin, V. P. Umbras, B. F. Minaev, D. M. Kizhner, Kh. T. Akhmetov, I. A. Moroz, A. A. Bryukhanov, N. G. Nechiporenko, V. S. Ivanii, Yu. A. Gnedov, Yu. I. Romanov
Publikováno v:
Soviet Physics Journal. 19:1385-1390
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829c0762e2ebf6f2b8b6d244220221cf
https://doi.org/10.1007/bf00891226
https://doi.org/10.1007/bf00891226
Publikováno v:
Soviet Physics Journal. 28:542-546
The electrophysical properties, the lattice constant, and the structure of sulfur doped epitaxial gallium arsenide layers were investigated using a complex of methods. The experimental data indicate that the sulfur atoms can exist in the GaAs lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7c5f603d28f4422576a400cea6155d
https://doi.org/10.1007/bf00896179
https://doi.org/10.1007/bf00896179
Publikováno v:
Soviet Physics Journal. 13:163-166
These results show that when epitaxial films are grown in a closed gas-transport system there are clear correlations among the rate at which material is supplied, the film growth rate, the defectiveness of the film, the doping level, and the properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::725f9d6f9c7dbfd396c669c7f4c8b83c
https://doi.org/10.1007/bf00814090
https://doi.org/10.1007/bf00814090
Publikováno v:
Soviet Physics Journal. 15:974-977
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be0b288ea7a94fb991d2c4c6f9e6dcf1
https://doi.org/10.1007/bf00894681
https://doi.org/10.1007/bf00894681