Zobrazeno 1 - 9
of 9
pro vyhledávání: '"O. M. Castellini"'
Autor:
Carie Holladay, Gina K. Walejko, Greta M. Zenner, Wendy C. Crone, Terra J. Theim, O. M. Castellini
Publikováno v:
Journal of Nanoparticle Research. 9:183-189
Researchers are faced with challenges when addressing the public on concepts and applications associated with nanotechnology. The goal of our work was to understand the public’s knowledge of nanotechnology in order to identify appropriate starting
Autor:
Mark A. Eriksson, Beth M. Nichols, O. M. Castellini, J. M. Simmons, Matthew S. Marcus, Robert J. Hamers
Publikováno v:
Small. 2:902-909
The ability to integrate carbon nanotubes, especially single-walled carbon nanotubes, seamlessly onto silicon would expand their range of applications considerably. Though direct integration using chemical vapor deposition is the simplest method, the
Autor:
O. M. Castellini, Matthew S. Marcus, Robert J. Hamers, Chang-Soo Lee, Mark A. Eriksson, J. M. Simmons, Beth M. Nichols, Sarah E. Baker
Publikováno v:
The Journal of Physical Chemistry B. 110:7113-7118
Exposing single-walled carbon nanotubes to room-temperature UV-generated ozone leads to an irreversible increase in their electrical resistance. We demonstrate that the increased resistance is due to ozone oxidation on the sidewalls of the nanotubes
Autor:
J. L. McChesney, V. Perez-Dieste, C. B. Murray, J.-L. Lin, A. Kirakosian, Mark A. Eriksson, J. N. Crain, O. M. Castellini, F. J. Himpsel, Charles T. Black
Publikováno v:
Applied Physics Letters. 83:5053-5055
The pathway for thermal decomposition of an oleic acid surfactant protecting Co and Ni nanocrystals is identified by probing the relevant molecular orbitals with x-ray absorption spectroscopy. The two steps observed previously in thermogravimetric me
Autor:
Emma Tevaarwerk, O. M. Castellini, Drew Garvin Keppel, S.T. Utley, Mark A. Eriksson, Max G. Lagally, P. Rugheimer, Donald E. Savage
Publikováno v:
Applied Physics Letters. 80:4626-4628
A variation of electric force microscopy (EFM) is used to measure the electrical isolation of SiGe quantum dots (QDs). The SiGe QDs are grown on mesas of ultrathin silicon on insulator. Near the mesa edges, the thin silicon layer has been incorporate
Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light absorption in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2f75fffb4c4501ff5c4ed98bb960b75
Autor:
O. M. Castellini, Wendy C. Crone, Paul Krajniak, Terra J. Theim, Greta M. Zenner, Carie Holladay, Gina K. Walejko
Publikováno v:
MRS Proceedings. 909
The use of exhibits in informal science education venues such as science centers and museums is an integral part of engaging students in science, encouraging them to take science courses in school, and motivating them to pursue science and engineerin
Autor:
Mark A. Eriksson, Bin Yang, J. M. Simmons, O. M. Castellini, Matt Marcus, Max G. Lagally, Feng Liu, Minghuang Huang, Frank S. Flack
Publikováno v:
MRS Proceedings. 849
The strain driven self-assembly of faceted Ge nanocrystals during epitaxy on Si(001) to form quantum dots (QDs) is by now well known. We have also recently provided an understanding of the thermodynamic driving force for directed assembly of QDs on b
Autor:
Drew Garvin Keppel, Pengpeng Zhang, Donald E. Savage, Bradley J. Larson, O. M. Castellini, Mark A. Eriksson, Bin Yang, Matthew S. Marcus, J. M. Simmons, Max G. Lagally, Zhiwei Li
Publikováno v:
Applied Physics Letters. 86:263107
We demonstrate a way to direct carbon nanotube growth using Si nanocrystals that are self-ordered via the thermal decomposition of thin silicon-on-insulator substrates. The Si nanocrystals are about 90nm wide and 100–150nm tall, with 200nm spacing.