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Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

Autor: C. Ticoş, Rachel Goldman, E.-M. Pavelescu, Raluca Gavrila, Akihiro Wakahara, A. Matei, Keisuke Yamane, O. Ligor, J. Occena

Publikováno v: Applied Physics Letters. 117:142106

We have examined the influence of electron irradiation and rapid thermal annealing on photoluminescence emission from GaAsNBi alloys. Electron irradiation of a 1-eV compressively strained GaNAsBi-on-GaAs epilayer, grown by molecular beam epitaxy and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::256594a9acba3f4c5a03e4c5a611ca2d
https://doi.org/10.1063/5.0027400

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Autor: A. Kadys, Jūras Mickevičius, R. Tomašiūnas, O. Ligor, E. M. Pavelescu, Mindaugas Andrulevičius, Gintautas Tamulaitis

Publikováno v: Journal of Physics D: Applied Physics. 52:325105

The band offset parameters of low-boron-content BGaN/GaN heterojunctions have been studied using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) in BxGa1−xN epilayers (x ≤ 0.043) grown on GaN/sapphire and AlN/sapphire templates.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3458f4fa0e5573c5942bf0498110a586
https://doi.org/10.1088/1361-6463/ab2337

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Mesure et cartographie à l’échelle nanométrique des propriétés ferroélectriques et diélectriques des couches minces par les techniques dérivées de la microscopie à force atomique

Autor: O. Ligor, A. Brugere, Brice Gautier, S. Gidon, A. Descamps-Mandine, David Albertini

Publikováno v: Matériaux & Techniques. 99:483-488

Cette communication vise a presenter l’apport des techniques derivees de la microscopie a force atomique en mode contact a la caracterisation des proprietes electriques des couches minces dielectriques et ferroelectriques. La cartographie et la mes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ccc29ec7d53a13908e2db6bea63811aa
https://doi.org/10.1051/mattech/2011115

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Interpretation of scanning capacitance microscopy for thin oxides characterization

Autor: David Albertini, Brice Gautier, L. Militaru, Armel Descamps-Mandine, O. Ligor, Nicolas Baboux

Publikováno v: Thin Solid Films. 517:6721-6725

In this paper, the reliability of the characterization of thin oxides at the nanoscale using Scanning Capacitance Spectroscopy (SCS) is addressed. 5 nm thick thermal silicon dioxide layers are probed by SCS and compared to capacitance versus voltage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1eb87e46bd962ba007390846b4f56685
https://doi.org/10.1016/j.tsf.2009.05.026

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Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

Autor: Robert Kudrawiec, Marta Gladysiewicz, Chantal Fontaine, O. Ligor, Cosmin Romanitan, E.-M. Pavelescu, J. Kopaczek, F. Dybala, Alexandre Arnoult

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 111 (19), pp.192104. ⟨10.1063/1.5002622⟩
Applied Physics Letters, American Institute of Physics, 2017, 111 (19), pp.192104. 〈10.1063/1.5002622〉
Applied Physics Letters, 2017, 111 (19), pp.192104. ⟨10.1063/1.5002622⟩

International audience; GaAsBi layers of various Bi concentrations have been grown by molecular beam epitaxy on a GaAs substrate and studied by electromodulation spectroscopy (EM). Optical transitions related to heavy-hole (HH) and light-hole (LH) ba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::514b26b79d8db7e7f5c28f3734a4ade9
https://doi.org/10.1063/1.5002622

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Nanoscale Characterization Of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy

Autor: O. Ligor, B. Gautier, A. Descamps, D. Albertini, L. Militaru, N. Baboux, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold

Publikováno v: AIP Conference Proceedings.

In this communication, Scanning Capacitance Spectroscopy (SCS) is used in order to characterize the electrical properties of thin dielectrics. The aim is to determine the best experimental conditions that lead to a reliable interpretation of SCS and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c784f845ef6682033bea5903ca1ff6e0
https://doi.org/10.1063/1.3251219

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Polymer thin film refractive index determination

Autor: Florin Garoi, Raluca Muller, O. Ligor, Victor Damian, Petre Cătălin Logofătu, Dan Apostol, Iuliana Iordache, Adrian Timcu

Publikováno v: Scopus-Elsevier
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This work presents two methods to evaluate the refractive index of a SU8 polymer thin film, used as an optical waveguide for an interferometric integrated sensor. We used Abbe's method and the fitting method, by fitting theoretical curves to the expe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fe7455e1a571113200d7f1158107743
https://doi.org/10.1109/smicnd.2004.1403042

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Investigations on phosphosilicate glass by using IR, AFM and cluster model calculation

Autor: O. Ligor, C. Moldovan, Raluca Gavrila, B.N. Bercu, M. Bercu

Publikováno v: Proceedings. International Semiconductor Conference.

Many applications of phosphosilicate glass (PSG) in microtechnology and in micro-machining, require the control of phosphorous content. This study is based mainly on optical spectroscopy and quantum calculations. It focuses on P=O bond formation and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42d0b62dbb66bc6fe2cf5d135295ade9
https://doi.org/10.1109/smicnd.2002.1105849

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