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pro vyhledávání: '"O. L. Golikov"'
Autor:
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov
Publikováno v:
Semiconductors. 55:895-898
Autor:
O. L. Golikov, E. A. Tarasova, N. N. Grigoryeva, S. V. Obolensky, S. V. Khazanova, A. B. Ivanov, A. S. Puzanov
Publikováno v:
Semiconductors. 54:1155-1160
The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity