Zobrazeno 1 - 10
of 155
pro vyhledávání: '"O. Kordina"'
Autor:
Daniel Sommer, A. Hugger, Enrico Zanoni, Jan Grünenpütt, C. De Santi, Gaudenzio Meneghesso, Alessandro Chini, K. Beilenhoff, J. Splettstößer, Hermann Stieglauer, Hervé Blanck, Matteo Meneghini, M. Hollmer, O. Kordina, Jr-Tai Chen, M. Rzin, M. Madel
In this paper, we investigate the trapping effects, of iron doped AlGaN/GaN HEMTs, before and after on-wafer 24 hour RF stress test. First, we study the trap centers responsible of the current collapse at different on-state bias and temperature condi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7efd9b33d71b9c14182c51f7e0c9c4b9
https://www.sciencedirect.com/science/article/pii/S0026271418306966?via=ihub
https://www.sciencedirect.com/science/article/pii/S0026271418306966?via=ihub
Autor:
Ranbir Singh, M.F. Brady, Scott Allen, St. G. Müller, K. G. Irvine, D. Henshall, Hua-Shuang Kong, R.C. Glass, Valeri F. Tsvetkov, John W. Palmour, C.H. Carter, O. Kordina, John A. Edmond
Publikováno v:
Scopus-Elsevier
Silicon carbide technology has made tremendous strides in the last several years, with a variety of encouraging device and circuit demonstrations in addition to volume production of nitride-based blue LEDs being fabricated on SiC substrates. The comm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dedfbf0807da13d4f59b82498647db65
https://doi.org/10.1016/s0921-5107(98)00437-1
https://doi.org/10.1016/s0921-5107(98)00437-1
Publikováno v:
Physical Review B. 47:12527-12531
A strong, optically detected magnetic-resonance (ODMR) signal at g=1.99 is observed on the internal 3 T 2 → 3 A 2 emission of V 3+ . The ODMR excitation spectrum is identical with the emission spectrum. From the analysis of the experimental data it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5c59fe29f37072f9478717aa7b66a3e
https://doi.org/10.1103/physrevb.47.12527
https://doi.org/10.1103/physrevb.47.12527
Akademický článek
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Akademický článek
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Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most desirable SiC polytype for power devices because of its superior electron transport properties. Micropipe defect densities in 4H-SiC have been dramatically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e87f76de06b79b9b3316b820e57ce81f
https://doi.org/10.1109/ispsd.1997.601423
https://doi.org/10.1109/ispsd.1997.601423
Autor:
Anant K. Agarwal, T.P. Chow, O. Kordina, J.B. Fedison, Ranbir Singh, John W. Palmour, Sei-Hyung Ryu
Publikováno v:
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).
Devices based on SiC have been demonstrated with increasingly larger blocking voltage and higher current handling capability over the last several years. GTO thyristors based on this material have been pursued and devices with blocking voltages of 70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66c32af58d172ac4467aee5aea5cc3fd
https://doi.org/10.1109/drc.2000.877121
https://doi.org/10.1109/drc.2000.877121
Akademický článek
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Publikováno v:
MRS Proceedings. 572
Epitaxial 4H-SiC layers suitable for high power devices have been grown in a hot-wall chemical-vapor deposition (CVD) system. These layers were subsequently characterized for many parameters important in device development and production. The uniform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684c70127104b9609ad8cfd55dbce573
https://doi.org/10.1557/proc-572-167
https://doi.org/10.1557/proc-572-167
Autor:
Yu. E. Kitaev, A. G. Panfilov, P. Tronc, R. A. Evarestov, V. Donchev, T. Z. V. Ivanov, K. Germanova, S. Vlaev, A. Miteva, E. Valcheva, T. Paskova, O. Kordina, R. Yakimova, E. Janzen, M. Zaluzny, V. Bondarenko, V. Ya. Aleshkin, V. M. Danil’tsev, O. I. Khrykin, Z. F. Krasil’nik, D. G. Revin, V. I. Shashkin, A. B. Kozyrev, A. M. Belyantsev, A. M. Malyarevich, K. V. Yumashev, P. V. Prokoshin, M. V. Artemyev, V. S. Gurin, V. P. Mikhailov, S. Saltiel, I. Buchvarov, K. Koynov, P. Tzankov, Ch. Iglev
Publikováno v:
Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices ISBN: 9789048149643
Recently, using the method of induced band representations of space groups, the full electron state symmetries and the selection rules for optical transitions in the (GaAs)m(AlAs)n superlattices (SL’s) were studied. The [001], [110], and [111] grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68bc4d888da7e0410d575a13a3e85ccc
https://doi.org/10.1007/978-94-015-8965-9_1
https://doi.org/10.1007/978-94-015-8965-9_1