Zobrazeno 1 - 10
of 74
pro vyhledávání: '"O. Kjebon"'
Publikováno v:
Calphad. 18:397-407
The interaction parameters for the Ga x In 1−x As y P 1−y solid solutions in equilibrium with the source gases used for growing them by VPE (vapour phase epitaxy) have been optimised. This has been achieved by combining a sublattice model with ou
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
IN behaviour of p/Sl/n and p/n/SI/n configurations are studied and compared. These results are exploited to extract their contributions to leakage currents in two types of buried heterostructure lasers which use SI-InP:Fe as the current blocking laye
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
Autor:
Gunnar Landgren, Ulf Öhlander, O. Kjebon, S. Nilsson, D. Karlsson-Varga, S. Lindgren, S. Lourdudoss, J. Wallin, B. Broberg
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
Three-electrode DFB (distributed feedback) lasers with excellent performance and single-mode yield have been fabricated using a robust technology which includes MOVPE (metal-organic vapor-phase epitaxy) growth of quantum wells, reactive ion etching,
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
Hydride vapor phase epitaxy (HVPE) has been used for regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in [110] and [-110] directions. The regrowth morphology and the electrical properties are similar in both cases. It
Autor:
U. Öhlander, O. Sahlén, O. Kjebon, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, L. Bäckbom
Publikováno v:
Semiconductor Lasers Advanced Devices and Applications.
Strained-layer quantum well (QW) technology allows band-engineered active material to improve threshold current and output power [1], speed [2-4], chirp [2] and temperature performance [5]. A distributed Bragg reflector (DBR) section can be used to o
Publikováno v:
Scopus-Elsevier
Semi-insulating iron doped InP was grown with MOVPE around reactive ion etched laser mesas without using any wet etchant to optimise the mesa shape or to form a mask overhang. To achieve good planarity and selectivity, growth was performed at high te
Autor:
Yichuan Yu, S. Karlsson, C.P. Liu, R. Schatz, U. Westergren, O. Kjebon, C.H. Chuang, Sailing He, L. Thylen, A.B. Krysa, J.S. Roberts, A.J. Seeds
Publikováno v:
IEEE Photonics Technology Letters; 5/1/2006, Vol. 18 Issue 9, p1040-1042, 3p
Autor:
H. Pfrommer, M.A. Piqueras, J. Herrera, V. Polo, A. Martinez, S. Karlsson, O. Kjebon, R. Schatz, Y. Yu, T. Tsegaye, C.P. Liu, C.H. Chuang, A. Enard, F. Van Dijk, A.J. Seeds, J. Marti
Publikováno v:
IEEE Photonics Technology Letters; 1/15/2006, Vol. 18 Issue 2, p406-408, 3p
Publikováno v:
IEEE Photonics Technology Letters; Jan2004, Vol. 16 Issue 1, p21-23, 3p