Zobrazeno 1 - 5
of 5
pro vyhledávání: '"O. I. Simchuk"'
Autor:
K. M. Morozov, O. I. Simchuk, Konstantin A. Ivanov, A. V. Belonovskii, E. I. Girshova, E. A. Kharitonova
Publikováno v:
Technical Physics Letters. 47:61-64
The thermal and optical properties of a combined (hybrid) metal–dielectric reflector comprising a gold layer and distributed Bragg reflector composed of alternating In0.52Al0.48As/In0.53Ga0.47As bilayers are considered. It is established that a hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c61fb3a049ff5911fae1e8d41bd5ebcc
https://doi.org/10.1134/s1063785021010223
https://doi.org/10.1134/s1063785021010223
Autor:
S. A. Kadinskaya, N. V. Kryzhanovskaya, Anna S. Dragunova, F. I. Zubov, Eduard Moiseev, A. M. Nadtochii, Alexey M. Mozharov, M. M. Kulagina, Mikhail V. Maximov, O. I. Simchuk, Alexey E. Zhukov
Publikováno v:
Technical Physics Letters. 46:783-786
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots have been transferred to the surface of a silicon wafer using an indium solder. The microlasers have a common electric contact deposited on top of the residual n+-GaAs substrate and individua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c65e6e84db7e1751159c19761fb9a5f
https://doi.org/10.1134/s1063785020080295
https://doi.org/10.1134/s1063785020080295
Autor:
N. V. Kryzhanovskaya, Mircea Guina, M. M. Kulagina, A. E. Zhukov, O. I. Simchuk, S. A. Kadinskaya, Mikhail V. Maximov, Eduard Moiseev
Publikováno v:
Semiconductors. 54:263-267
The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9d99ab3c7354f823e9df4405ea63060
https://doi.org/10.1134/s1063782620020177
https://doi.org/10.1134/s1063782620020177
Autor:
S. I. Troshkov, Yu. M. Zadiranov, M. M. Kulagina, O. I. Simchuk, A. E. Zhukov, Andrey A. Lipovskii, N. V. Kryzhanovskaya, Eduard Moiseev, Yu. S. Polubavkina, F. I. Zubov, Mikhail V. Maximov
Publikováno v:
Semiconductors. 50:1408-1411
The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f425b424736dc1f9542775533976f133
https://doi.org/10.1134/s1063782616100250
https://doi.org/10.1134/s1063782616100250
Publikováno v:
Semiconductors. 48:1452-1455
The possibility of the formation of multilayer (30 layers) InAs/GaAs quantum-dot arrays with high structural and optical quality is demonstrated at small spacer-layer thicknesses (30–15 nm). In the case of decreasing the spacer-layer thickness to 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba391895a74bca6a7d80a512f99b9139
https://doi.org/10.1134/s1063782614110190
https://doi.org/10.1134/s1063782614110190