Zobrazeno 1 - 10
of 34
pro vyhledávání: '"O. I. Rabinovich"'
Autor:
S.V. Podgornaya, O. I. Rabinovich
Publikováno v:
Software Engineering Perspectives in Intelligent Systems ISBN: 9783030633189
In this work nitride heterostructures were simulated for optoelectronic devices such as photodetectors (phototransistors) and solar cells for improving their efficiency. The influence of aluminium atoms and doping as well as temperature on AlGaN/GaN-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e605a69f4a2a82aacb7ae8effcd640
https://doi.org/10.1007/978-3-030-63319-6_12
https://doi.org/10.1007/978-3-030-63319-6_12
Autor:
A A Krasnov, S. I. Didenko, O. I. Rabinovich, I.V. Fedorchenko, D.S. Gaev, Sergey F. Marenkin, Sergey Legotin, Marina Orlova, A.R. Kushkov
Publikováno v:
Journal of Crystal Growth. 483:245-250
The results of nanoscale islet films grown by AIIIBV and AIVBVI incongruent evaporation compounds are discussed. The surface morphology structure was studied by atomic-force microscopy. It is shown that the distribution density and the characteristic
Autor:
P. Skupiński, S. F. Marenkin, I. V. Fedorchenko, O. I. Rabinovich, Lukasz Kilanski, S. I. Didenko, Witold Dobrowolski, Sergey Legotin, A. I. Ril
Publikováno v:
Journal of Crystal Growth. 468:683-687
Phase diagram in the ZnSiAs 2 –MnAs nanocomposite system was studied by Х-ray, DTA and SEM. The system has an eutectic character. The coordinates of eutectic are 87±1 mol% MnAs and 847±10 °C. The eutectic consists of the manganese arsenide latt
Publikováno v:
Journal of Crystal Growth. 468:567-571
In current paper nanoheterostructure optimization for LED and phototransistor usage is discussed. Special doping into quantum wells and barriers by Indium atoms was investigated. By simulation improved quantum sized active region was detected which i
Autor:
O. I. Rabinovich, S. I. Didenko
Publikováno v:
Crystallography Reports. 62:474-479
The AlInGaN and AlGaInP nanoheterostructures design has been optimized by computer simulation in order to use them in optoelectronics. The possibility of improving the performance characteristics of LEDs by 20% is analyzed. The results are presented
Autor:
N. M. Shmidt, Alexander Usikov, Eugene B. Yakimov, Jin Hyeon Yun, In Hwan Lee, Kirill D. Shcherbachev, N. B. Smirnov, S. A. Tarelkin, Yu.N. Makarov, Alexander Y. Polyakov, Heikki Helava, B P Papchenko, O. I. Rabinovich, Sergey Kurin, Sergey Didenko
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 1, Pp 32-39 (2017)
Electrical and luminescent properties of near-UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nomi
Autor:
Marina Orlova, S.V. Podgornaya, Alexey Ril, O. I. Rabinovich, Sergey Didenko, A. Savchuk, Sergey F. Marenkin
Publikováno v:
Optical and Quantum Electronics. 51
AlGaN/GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV–visible wavelength range. In this work we present the results of phototransistors parameters simulation based on Sim Windows for improvi
Autor:
S. A. Tarelkin, Yu.N. Makarov, Jin Hyeon Yun, O. I. Rabinovich, N. B. Smirnov, Eugene B. Yakimov, Alexander Y. Polyakov, N. M. Shmidt, B P Papchenko, Alexander Usikov, In Hwan Lee, Kirill D. Shcherbachev, Heikki Helava, Sergey Didenko, Sergey Kurin
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 19:75-86
Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under no
Autor:
Ekaterina Trifonova, O. I. Rabinovich, A. V. Chernykh, D. D. Prikhodko, Mikhail N. Kondakov, S. V. Chernykh, Dmitry A. Kiselev, N. I. Polushin, Kirill D. Shcherbachev, Sergey Didenko, Taisia E. Drozdova, Gennady I. Britvich, Yury N. Glybin, Sergey Yu. Troschiev, S. A. Tarelkin, A. P. Chubenko
Publikováno v:
physica status solidi (a). 217:1900888
Autor:
V. N. Murashev, M. Zakusov, O. I. Rabinovich, Yu Akhmerov, N. Kourova, S. I. Didenko, A. Savchuk, A. Zharkova, A. Chelny, O. R. Abdullaev, A. Aluyev, M. Mezhenny
Publikováno v:
Journal of Physics: Conference Series. 1410:012022
The a-GaN films were successfully grown on the r-sapphire substrate by MOCVD method. The structure of V-defects was investigated by AFM and SEM. The dependence of V-defects density on growth temperature of a-GaN film at a constant hydrogen flow throu