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pro vyhledávání: '"O. I. Liubchenko"'
Autor:
S. Vitusevich, I.M. Nasieka, A. V. Naumov, V. V. Kalyuzhnyi, O. I. Liubchenko, I. O. Antypov, M. I. Boyko, A. E. Belyaev
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract The active channels in AlGaN/GaN‐based heterostructures are studied under different applied electrical fields to identify the Joule heating factors affecting the temperature values in the channels. The temperature in active channels of two
Externí odkaz:
https://doaj.org/article/b8624d2b47a44cd9b68bb6e867d4f0b5
