Zobrazeno 1 - 10
of 13
pro vyhledávání: '"O. I. Konkov"'
Autor:
N. V. Bazlov, E. F. Bubnov, A. V. Derbin, I. S. Drachnev, D. V. Ivanov, O. I. Konkov, I. M. Kotina, M. S. Mikulich, V. N. Muratova, N. V. Niyazova, D. A. Semenov, M. V. Trushin, E. V. Unzhakov, E. A. Chmel
Publikováno v:
Physics of Atomic Nuclei. 85:931-935
Autor:
S V Bakhlanov, A V Derbin, I S Drachnev, O I Konkov, I M Kotina, A M Kuzmichev, I S Lomskaya, M S Mikulich, V N Muratova, N V Niyazova, D A Semenov, M V Trushin, E V Unzhakov
Publikováno v:
Journal of Physics: Conference Series. 2103:012138
The response function of the recoil nuclei in detectors designed for detection of neutrinos or dark matter particles can be determined only through usage of a neutron source with a known energy spectrum. A possible solution for a compact neutron cali
Autor:
S V Bakhlanov, N V Bazlov, I D Chernobrovkin, A V Derbin, I S Drachnev, I M Kotina, O I Konkov, A M Kuzmichev, M S Mikulich, V N Muratova, M V Trushin, E V Unzhakov
Publikováno v:
Journal of Physics: Conference Series. 2103:012139
Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated. The detectors were irradiated at room temperature up to a total number of the registered
Autor:
I. M. Kotina, M. S. Lasakov, N. V. Bazlov, I. S. Drachnev, M. V. Trushin, A. M. Danishevskii, E. V. Unzhakov, A. V. Derbin, A. M. Kuzmichev, O. I. Konkov
Publikováno v:
Journal of Physics: Conference Series. 1697:012181
Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fix
Autor:
O. I. Konkov, N. V. Bazlov, S. N. Abolmasov, E. V. Unzhakov, A. V. Derbin, E. I. Terukov, I. S. Drachnev, I. M. Kotina, N. V. Pilipenko, G. E. Gicharevich, E. A. Chmel
Publikováno v:
Journal of Physics: Conference Series. 1400:055056
Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silico
Autor:
Andrey G. Kazanskii, O. I. Konkov, Andrey V. Emelyanov, Pavel K. Kashkarov, V. L. Lyaskovskii, Pavel A. Forsh, Nikolay Kutuzov, Mark V. Khenkin
Publikováno v:
Technical Physics Letters. 40:141-144
We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30–155 mJ/cm2. The distribution of the volume fraction of a crysta
Autor:
A. V. Prikhod’ko, O. I. Konkov
Publikováno v:
Semiconductors. 36:1204-1208
Experimental studies of fullerenes at the department of experimental physics, St. Petersburg State Technical University, are reviewed. These studies were performed under the guidance of Professor V.F. Masterov, doctor of mathematics and physics. Prim
Publikováno v:
Fullerene Science and Technology. 6:481-497
The complex of studies carried out on CunC60 samples, including SQUID and microwave measurements clearly support the existence of a superconducting phase of Cu1,5 C60 with Tc=120K. Heating a samples of pyrolitic graphite intercalated with copper and
Publikováno v:
Journal of Optical Technology. 83:286
A well-known technology for fabricating fullerene membranes is applied to a natural carbon material—shungite. The main structural features of the new nanostructured sample are detected by optical methods (Raman scattering, scanning microscopy).
Publikováno v:
physica status solidi (a). 120:519-524
A study of the main features of cw photoluminescence (PL) in glow-discharge (GD) deposited films of a–Si:H is performed to establish a correlation between PL properties and growth conditions: composition of gas mixture [m = 5 to 100%, mSiH4–(100