Zobrazeno 1 - 10
of 31
pro vyhledávání: '"O. I. Fitsych"'
Autor:
Rafal Jakiela, S. A. Dvoretsky, M. V. Yakushev, A. V. Voitsekhovskii, A. G. Korotaev, K. D. Mynbaev, Z. Swiatek, N. N. Mikhailov, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-effect measurements and mobility spectrum analysis. The stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b8136bd4e851cefb86a3162c48e57ad
https://doi.org/10.1007/s11664-021-08877-w
https://doi.org/10.1007/s11664-021-08877-w
Autor:
A. V. Voitsekhovskii, H. V. Savytskyy, D. V. Marin, I. I. Izhnin, O. I. Fitsych, M. V. Yakushev, V. S. Varavin, Jerzy Morgiel, A. G. Korotaev, K. D. Mynbaev, O. Yu. Bonchyk, Z. Swiatek
Publikováno v:
Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fluence in n and p-type Hg0.78Cd0.22Te films grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22174c5da87267785349a0b3f300e297
https://doi.org/10.1007/s13204-021-01704-y
https://doi.org/10.1007/s13204-021-01704-y
Autor:
Kirill A. Lozovoy, Kristina I. Khomyakova, Andrey P. Kokhanenko, Vladimir V. Dirko, Nataliya Yu. Akimenko, I. I. Izhnin, O. I. Fitsych, Rahaf M. H. Douhan, Alexander V. Voitsekhovskii
Publikováno v:
Applied nanoscience. 2022. Vol. 12, № 3. P. 253-263
Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communication systems and quantum cryptography. In the past
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6911b63e0b87f21b9ce32fb4c88f8a48
https://doi.org/10.1007/s13204-021-01667-0
https://doi.org/10.1007/s13204-021-01667-0
Autor:
A. G. Korotaev, Kurban Kurbanov, V. G. Remesnik, K. D. Mynbaev, Z. Świątek, S. A. Dvoretskii, A. V. Voitsekhovskii, M. V. Yakushev, Jerzy Morgiel, Nikolay N. Mikhailov, V. S. Varavin, H. V. Savytskyy, I. I. Izhnin, O. I. Fitsych, O. Yu. Bonchyk
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc012d947cedb20e0389749c9091a105
https://doi.org/10.1007/s11182-020-02034-2
https://doi.org/10.1007/s11182-020-02034-2
Autor:
M. V. Yakushev, Z. Swiatek, O. Yu. Bonchyk, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, A. V. Voitsekhovskii, N. N. Mikhailov, Jerzy Morgiel, Ihor I. Syvorotka, D. V. Marin, Rafal Jakiela, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions with 190 keV and 350 keV energy and 1014 cm–2 fluence in molecular-beam epitaxy-grown Hg0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f42d8b6ff1277c4617cccad3c0931d4
https://doi.org/10.1007/s13204-020-01327-9
https://doi.org/10.1007/s13204-020-01327-9
Autor:
Kirill A. Lozovoy, I. I. Izhnin, O. I. Fitsych, Vladimir V. Dirko, Alexander V. Voitsekhovskii, Andrey P. Kokhanenko
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533
In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kinetic models. The contribution of interaction energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66888081678f31d20155c6ef9df642b6
https://doi.org/10.1007/s13204-019-00965-y
https://doi.org/10.1007/s13204-019-00965-y
Autor:
Nikolay N. Mikhailov, A. V. Voitsekhovskii, Rafal Jakiela, A. G. Korotaev, K. D. Mynbaev, V. S. Varavin, I. I. Izhnin, O. I. Fitsych, S. A. Dvoretsky, M. V. Yakushev, Z. Swiatek
Publikováno v:
Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The implantation was performed with ion energy 190 or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e00470e8f7a0ec00c8f17d33192b88b6
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901902
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901902
Autor:
N. N. Mikhailov, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, Z. Swiatek, O. Yu. Bonchyk, M. V. Yakushev, A. V. Voitsekhovskii, S. A. Dvoretsky, V. S. Varavin, Y. Morgiel, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular beam epitaxy on GaAs substrates with ZnTe and CdT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a20b6f6a8302510856e81d5a5cdcae3
http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000656168
http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000656168
Autor:
O. I. Fitsych, Stanislav M. Dzyadukh, Jerzy Morgiel, I. I. Izhnin, M. V. Yakushev, H. V. Savytskyy, A. V. Voitsekhovskii, A. G. Korotaev, V. S. Varavin, Sergey N. Nesmelov, K. D. Mynbaev, S. A. Dvoretsky, N. N. Mikhailov, Z. Swiatek, O. Yu. Bonchyk
Publikováno v:
Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A complete annihilation of implantation-induced extended defects (dislocation loops), quas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f142793fac8c3c95947cc6be4fd4b8a0
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794657
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794657
Autor:
D. V. Marin, H. V. Savytskyy, A. V. Voitsekhovskii, Z. Swiatek, S. A. Dvoretsky, O. Yu. Bonchyk, Y. Morgiel, M. V. Yakushev, I. I. Izhnin, O. I. Fitsych, V. S. Varavin, A. G. Korotaev, K. D. Mynbaev
Publikováno v:
Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730
Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface layers. In addition to typical highly defective lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c19d1d6d6cffe8bf0f21d5829436fd1f
https://doi.org/10.1007/s13204-018-0679-y
https://doi.org/10.1007/s13204-018-0679-y