Zobrazeno 1 - 10
of 26
pro vyhledávání: '"O. Gonnard"'
Autor:
R. Gwoziecki, C. Raynaud, P. Touret, O. Gonnard, J. Pretet, Gilles Gouget, Simon Deleonibus, G. Guegan
Publikováno v:
Solid-State Electronics. 53:741-745
A detailed analysis of the body potential impact on the performance enhancement of BC pMOSFET when the body is not contacted, is reported in this paper. Investigations on floating-body device behavior reveal that these new floating body effect leads
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00caf514c310b8acfb1a185b418e311f
https://doi.org/10.1016/j.sse.2009.02.011
https://doi.org/10.1016/j.sse.2009.02.011
Autor:
Georges Guegan, O. Gonnard, Patricia Touret, Simon Deleonibus, Gilles Gouget, Jeremy Pretet, Romain Gwoziecki, Christine Raynaud
Publikováno v:
ECS Transactions. 6:165-170
In this paper, we investigate and analyze the impact of the body potential on the performance enhancement of BC pMOSFET when the body contact is floating. Many geometries and layouts of PD SOI pMOSFET with 1.6 nm physical gate oxide have been compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce238f7addfb3badc58456262053ed6b
https://doi.org/10.1149/1.2728856
https://doi.org/10.1149/1.2728856
Publikováno v:
2007 IEEE International SOI Conference.
Thin film SOI is a key technology for wireless and RF applications. We demonstrate the successful transfer of a DriftMOS transistor from the 130 nm technology to the 65 nm one on thin SOI. The process option introduced in this node enables to achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f595ae10abcb73c292eb6ecbbbfa2844
https://doi.org/10.1109/soi.2007.4357852
https://doi.org/10.1109/soi.2007.4357852
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
The first complementary LDMOS transistors in thin SOI 65 nm low power technology is presented. The full functionality and integration are demonstrated. Complementary devices are achieved with great electrical parameters. Then a positive breakdown vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f425faee3beda37585b3ceb01e4f3883
https://doi.org/10.1109/ispsd.2007.4294969
https://doi.org/10.1109/ispsd.2007.4294969
Publikováno v:
ESSDERC 2007 - 37th European Solid State Device Research Conference.
The static and dynamic analysis of the thermal resistance (RTH) in 65 nm SOI DriftMOS power devices is presented in this work. Experiment and numerical simulation are both used to compare DriftMOS devices integrated in 65 nm and 130 nm SOI technologi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a2aea070315bc2df0d5bb8106e3896
https://doi.org/10.1109/essderc.2007.4430906
https://doi.org/10.1109/essderc.2007.4430906
Publikováno v:
2005 IEEE International SOI Conference Proceedings.
We have added to a 0.13/spl mu/m thin SOI CMOS core process a high competitive SOI NLDEMOS which presents excellent power switch and analog characteristics. Measurements have demonstrated that both drift and BC design rules allow to obtain HV devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dac87ef92b1589965098f60bff1009d
https://doi.org/10.1109/soi.2005.1563577
https://doi.org/10.1109/soi.2005.1563577
Autor:
Georges Guegan, O. Gonnard, Simon Deleonibus, Mikael Casse, Gilles Gouget, Romain Gwoziecki, Christine Raynaud
Publikováno v:
MRS Proceedings. 913
SOI technology offers advantages over bulk silicon and become a good candidate for analog/RF applications. However, the presence of a buried oxide causes self-heating which can degrade the device performance. The effects of self-heating have been exa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a05019dbe47096addd4a689556b61aa
https://doi.org/10.1557/proc-0913-d03-02
https://doi.org/10.1557/proc-0913-d03-02
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
Substrate current injection, and particularly minority carrier injection, is one of the major causes for redesign in smart power technology. This substrate parasitic current induces unexpected failure system such as latch-up in CMOS circuitry or anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f4889d37e9552eedae9038a5e89185d
https://doi.org/10.1109/ispsd.2002.1016224
https://doi.org/10.1109/ispsd.2002.1016224
Autor:
J.P. Bailbe, A. Cazarré, F. Murray, Stephane Pinel, A. Marty, F. Lépinois, J. Tasselli, O. Gonnard, Joan Ramon Morante
Publikováno v:
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).
Development of advanced packaging technologies such as Chip Size Packages, Multi Chip Modules and 3D stacks of MCMs has led to a significant reduction in mass and volume of electronics systems. Among these techniques, we develop a vertical integratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab100f75d70dbf49be7a1ed7e0317ee
https://doi.org/10.1109/miel.2002.1003311
https://doi.org/10.1109/miel.2002.1003311
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
Crosstalks between high voltage power devices and low voltage CMOS devices due to substrate current are a major problem in automotive applications. This parasitic current induces unexpected failure system such as latchup in CMOS circuits. In this pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92423e912c02da80a1597102f0278d43
https://doi.org/10.1109/bipol.2002.1042882
https://doi.org/10.1109/bipol.2002.1042882