Zobrazeno 1 - 10
of 19
pro vyhledávání: '"O. Gfrörer"'
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0887aa8711ea8f0b65df007ee15df384
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<405::aid-pssb405>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<405::aid-pssb405>3.0.co
Publikováno v:
Scopus-Elsevier
We have studied GaN/InGaN heterostructures grown by selective area low pressure metalorganic vapor phase epitaxy (LP-MOVPE). A GaN layer already grown on the c-face of sapphire has been used as substrate, partly masked by SiO 2 . In a second epitaxia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d75a8e62c7f222fb62166d46b4b63e3
https://doi.org/10.1016/s0921-5107(97)00189-x
https://doi.org/10.1016/s0921-5107(97)00189-x
Publikováno v:
Semiconductor Science and Technology. 10:1484-1488
We report on nonlinear optical absorption at the band edge of tensile strained In1-xGaxAs/InP MQW structures. While at low strain the well known exciton bleaching is observed, a new nonlinearity dominates at high tensile strain, where the conduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26638d21982b91b7e029d553f51a7b71
https://doi.org/10.1088/0268-1242/10/11/009
https://doi.org/10.1088/0268-1242/10/11/009
Publikováno v:
Scopus-Elsevier
We have investigated GaN layers of various thicknesses grown on (0001) c-face sapphire by metalorganic vapor phase epitaxy (MOVPE) with an intermediate 10 nm AlN nucleation layer, in order to study the thermal strain in these layers. Using spatially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f93036d67fffcebcc3b79d374852398
https://doi.org/10.1016/s0921-5107(96)01877-6
https://doi.org/10.1016/s0921-5107(96)01877-6
Publikováno v:
Scopus-Elsevier
We investigated optical properties (cathodoluminescence linescans) of selectively deposited quantum wells. As expected for selective MOVPE, composition and growth rate of bulk layers and quantum wells with thicknesses above 6 nm are determined by gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbacf5f07897d39ce162e53321143aea
https://doi.org/10.1109/iciprm.1995.522273
https://doi.org/10.1109/iciprm.1995.522273
Publikováno v:
ResearcherID
Scopus-Elsevier
Scopus-Elsevier
We have investigated Al0.12Ga0.88N layers with and without a 1 µm GaN buffer, grown on the c-face of α – Al2O3 substrate with an intermediate AlN nucleation layer grown by LP-MOVPE. We used spatially resolved cathodoluminescence spectroscopy at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9df15485857b25de24c4a5b3c96ca09a
https://doi.org/10.1557/proc-449-429
https://doi.org/10.1557/proc-449-429
Autor:
B. Kaufmann, G. Reyher, Andreas Hangleiter, Volker Härle, F. Steuber, A. Dörnen, S.-J. Im, O. Gfrörer, F. Scholz, H. Bolay
Publikováno v:
Scopus-Elsevier
GaN layers with different nucleation techniques have been grown by metalorganic vapor phase epitaxy. At atmospheric pressure, no epitaxial layer growth occurred, whereas at low pressure the GaN quality could be drastically improved by an AlN nucleati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e59efd9ebd03d0d8ddd4fb1434e560aa
http://www.scopus.com/inward/record.url?eid=2-s2.0-0040587213&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0040587213&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
Selectively deposited GaInAs InP quantum wells show extended monolayer terraces which are significantly larger than corresponding monolayer islands observed in the case of conventional non-selective epitaxy. We investigated the relation between the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89ed158da609e10e696f997b35757144
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030683817&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030683817&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5ae61a50807a71f0ac8b36633edbefb
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033242982&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033242982&partnerID=MN8TOARS
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