Zobrazeno 1 - 10
of 30
pro vyhledávání: '"O. Gelhausen"'
Publikováno v:
Journal of Crystal Growth. 269:106-110
Indium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL) spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak centered at 0.8eV was obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51ab0d392f6c81f543ef34a802c26bdc
https://doi.org/10.1016/j.jcrysgro.2004.05.087
https://doi.org/10.1016/j.jcrysgro.2004.05.087
Autor:
Bruno K. Meyer, A. Zeuner, M. Dworzak, O. Gelhausen, U. Haboeck, Matthew R. Phillips, Anna V. Rodina, M. Strassburg, Axel Hoffmann, Detlev M. Hofmann, H. Alves, Igor Krestnikov
Publikováno v:
physica status solidi (b). 241:607-611
An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical measurements and diffusion experiments. The thermalization behavior of the Zeeman split components confirms that the I 4 , I 6 , I 8 and I 9 exciton lines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4006175d9dbd4cfcc5211981e4be120c
https://doi.org/10.1002/pssb.200304187
https://doi.org/10.1002/pssb.200304187
Publikováno v:
Journal of Physics D: Applied Physics. 36:2976-2979
Scanning cathodoluminescence (CL) spectroscopy and imaging were used to study the effect of post-growth processing on the CL efficiency of metal-organic vapour phase epitaxy-grown Mg-doped GaN. In this work, two treatments, thermal annealing in high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7ab81a0ae2db45bc26bc1f199cc9aea
https://doi.org/10.1088/0022-3727/36/23/018
https://doi.org/10.1088/0022-3727/36/23/018
Publikováno v:
physica status solidi (b). 239:310-315
In-plane- and depth-resolved cathodoluminescence (CL) microanalysis and spectroscopy was carried out to study the impact of electron injection on electro-migration and diffusion of native defects and residual impurities in rapidly thermally annealed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53bd3558a7ae9de3c04f79aa3b1e9f11
https://doi.org/10.1002/pssb.200301844
https://doi.org/10.1002/pssb.200301844
Autor:
Axel Hoffmann, Ewa M. Goldys, T. Graf, Martin Strassburg, Enno Malguth, O. Gelhausen, Martin Stutzmann, M. Gjukic, Matthew R. Phillips
Publikováno v:
Applied Physics Letters. 84:4514-4516
The optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (5–23×1019 cm−3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c53eb3d8441575d0137daadb9f6e573
https://doi.org/10.1063/1.1757641
https://doi.org/10.1063/1.1757641
Publikováno v:
Applied Physics Letters. 83:3293-3295
The effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15955c7c7d98d285a8c25c31fc7ce029
https://doi.org/10.1063/1.1619210
https://doi.org/10.1063/1.1619210
Publikováno v:
Journal of Applied Physics. 89:3535-3537
We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc203a3a4f9d878aa12af25fb56b02dc
https://doi.org/10.1063/1.1350619
https://doi.org/10.1063/1.1350619
Publikováno v:
Physical Review B. 74
This work provides a consistent picture of the structural, optical, and electronic properties of Fe-doped GaN. A set of high-quality GaN crystals doped with Fe at concentrations ranging from $5\ifmmode\times\else\texttimes\fi{}{10}^{17}\phantom{\rule
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07203cecab0aaf127984a43cc34c1eb
https://doi.org/10.1103/physrevb.74.165202
https://doi.org/10.1103/physrevb.74.165202
Autor:
Tanja Paskova, O. Gelhausen, Ewa M. Goldys, Axel Hoffmann, Matthew R. Phillips, Bo Monemar, Martin Strassburg
Publikováno v:
MRS Proceedings. 798
Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d810e4b20a3eb883128c06be4d68c6f
https://doi.org/10.1557/proc-798-y5.20
https://doi.org/10.1557/proc-798-y5.20
Autor:
Matthew R. Phillips, Axel Hoffmann, Enno Malguth, Ewa M. Goldys, O. Gelhausen, T. Graf, M. Gjukic, Martin Strassburg, Martin Stutzmann
Publikováno v:
MRS Proceedings. 798
Molecular beam epitaxy-grown GaN with different Mn concentrations (5–23 × 10 cm-3) and codoped with Si were investigated by cathodoluminescence (CL) spectroscopy and optical transmission measurements. In the GaN:Mn, an intense absorption peak at 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e10f3ceb4c70ef206b8dc666d7bb434
https://doi.org/10.1557/proc-798-y8.5
https://doi.org/10.1557/proc-798-y8.5