Zobrazeno 1 - 10
of 18
pro vyhledávání: '"O. G. Zhevnyak"'
Publikováno v:
Pribory i Metody Izmerenij, Vol 13, Iss 4, Pp 276-280 (2022)
Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impuri
Externí odkaz:
https://doaj.org/article/a647700e6557455c89dd3c2a0a8818ba
Publikováno v:
Physics Letters A. 319:379-383
The approach to take into account the influence of the energy levels broadening on the intersubband acoustic phonon scattering rates is developed. The roughness of the quantum wire boundaries and the oscillations of crystal lattice atoms are treated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c4e0c7947ca296d5784d2178a71b78
https://doi.org/10.1016/j.physleta.2003.10.035
https://doi.org/10.1016/j.physleta.2003.10.035
Publikováno v:
Journal of Engineering Physics and Thermophysics. 76:864-867
A hybrid model, which makes it possible to calculate the influence of the drain voltage and the temperature on the mobility of electrons in the n‐channel of silicon MOS transistors with a high‐alloy substrate in the linear regime of their operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a7eff3fcad58a3e479b91e85ab8e46
https://doi.org/10.1023/a:1025614608299
https://doi.org/10.1023/a:1025614608299
Publikováno v:
Journal of Engineering Physics and Thermophysics. 71:111-114
Based on results of measurement and processing of volt-ampere characteristics as well as linetic modeling of electron transfer by the Monte Carlo method, the influence of the doping level and the temperature on electron mobility in the n channel of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed5b1981c72723cb245101023ba9603d
https://doi.org/10.1007/bf02682504
https://doi.org/10.1007/bf02682504
Publikováno v:
Journal of Engineering Physics and Thermophysics. 70:224-227
The process of transport of one-dimensional electrons in a GaAs quantum conductor is investigated by the Monte Carlo method. It is shown that in addition to scattering by polar optical phonons, the heating of charge carriers is also appreciably affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788df0a5c092be192960967c53c3cf6c
https://doi.org/10.1007/bf02660689
https://doi.org/10.1007/bf02660689
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f178a735342c3ad04b050cafbf4a964
https://doi.org/10.1142/9789814280365_0135
https://doi.org/10.1142/9789814280365_0135
Publikováno v:
SPIE Proceedings.
The Monte Carlo model of electron transport in SOI MOSFETs is proposed. Both 2D and 3D conditions are considered. The Poisson equation and boundary conditions are presented for every case. Fully depleted SOI MOSFETs and partially depleted SOI MOSFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e2d94b6865ba8d20862089532ee364
https://doi.org/10.1117/12.802533
https://doi.org/10.1117/12.802533
Autor:
F. F. Komarov, V. O. Galenchik, O. G. Zhevnyak, D. V. Pozdnyakov, Vladimir Borzdov, A. V. Borzdov
Publikováno v:
SPIE Proceedings.
In this article the results of calculation of electron scattering rates and the drift velocity of these particles in free standing in vacuum GaAs quantum wire, electron scattering rates via polar optical and acoustic phonons in transistor device stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc6ccb0e64cd1888bb80dd22433979f
https://doi.org/10.1117/12.683545
https://doi.org/10.1117/12.683545
Autor:
Vladimir Borzdov, F. F. Komarov, V. O. Galenchik, O. G. Zhevnyak, D. V. Pozdnyakov, A. V. Borzdov
Publikováno v:
SPIE Proceedings.
The Monte Carlo model of the impact ionization in deep submicron MOSFETs is worked out. This model allows the influence of the secondary charge carrier current on the drain current to be evaluated. The developed model is built on the basis of the red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57f5179ff1284d85efa960cc41e5beca
https://doi.org/10.1117/12.683488
https://doi.org/10.1117/12.683488
Autor:
F. F. Komarov, V. O. Galenchik, O. G. Zhevnyak, Vladimir Borzdov, A. V. Borzdov, D. V. Pozdnyakov
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5393ae286865bb85a54b719b45dc35ee
https://doi.org/10.1142/9789812701947_0129
https://doi.org/10.1142/9789812701947_0129