Zobrazeno 1 - 10
of 16
pro vyhledávání: '"O. G. Grushka"'
Publikováno v:
Semiconductors. 51:1041-1043
The parameters of impurity levels in Hg3In2Te6 samples are studied using the temperature dependences of the electron concentration n(T) and the Fermi-level energy E F(T). The dependences n(T) and E F(T) are obtained from data on the Hall coefficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7136b8dc5be5d1fc2336612db1fa125
https://doi.org/10.1134/s1063782617080061
https://doi.org/10.1134/s1063782617080061
Autor:
O. G. Grushka
Publikováno v:
Semiconductors. 50:719-721
Based on data on the Hall coefficient, it is shown that the existence of potential barriers in the region of impurity conductivity of highly compensated Hg3In2Te6 crystals is possible. The role of barriers in the anomalous behavior of transport pheno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e97741707141bde058a0124036166f
https://doi.org/10.1134/s1063782616060075
https://doi.org/10.1134/s1063782616060075
Autor:
S. M. Chupyra, S. V. Bilichuk, O. G. Grushka, O. M. Mysliuk, A. I. Savchuk, V. V. Shlemkevych
Publikováno v:
Semiconductors. 48:1271-1274
The results of studying the electrical and photoelectric properties of Hg3In2Te6 bulk crystals with stoichiometric composition and of Hg3(1 + δ)In2(1 − δ)Te6 crystals with a deviation from the stoichiometric composition of δ = ±0.06 are reporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ed5b92cec1f42920803e58390c9ad3
https://doi.org/10.1134/s1063782614100091
https://doi.org/10.1134/s1063782614100091
Publikováno v:
Semiconductors. 49:892-894
Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at Ec–0.69 eV in Hg3In2Te6 crystals. When light is absorbed by Fe2+ impurity centers, both electronic transitions of the impurity-level–con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc08e413d30a18bcecaebf2a652032d1
https://doi.org/10.1134/s106378261507009x
https://doi.org/10.1134/s106378261507009x
Publikováno v:
Semiconductors. 47:1141-1144
The effect of Mn impurities on the properties of Hg3In2Te6 crystals is studied by electrical and optical measurements. It is shown that, despite the high dopant concentration (1 × 1019 cm−3), the electron concentration remains the same as that in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a52206ee28478ad2dcdfcb9a175ff0
https://doi.org/10.1134/s1063782613090078
https://doi.org/10.1134/s1063782613090078
Autor:
Paul P. Horley, O. A. Chervinsky, Jesús González-Hernández, P. M. Gorley, Z. M. Grushka, Yu. V. Vorobiev, O. G. Grushka, V. P. Makhniy
Publikováno v:
physica status solidi c. 5:3622-3625
Anisotype heterojunctions n-InSe/p-CdTe were created by deposition over optical contact. The main electrical properties of the devices obtained were investigated. It was found that the current under the forward bias is determined by tunneling-recombi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::620e30e1234dcde8b4f7c6d79244de0c
https://doi.org/10.1002/pssc.200780149
https://doi.org/10.1002/pssc.200780149
Autor:
O. G. Grushka, P. N. Gorlei
Publikováno v:
Semiconductors. 37:168-171
The influence of silicon impurity on the energy-band spectrum in the Hg3In2Te6 semiconductor compound, which incorporated a high concentration of stoichiometric vacancies, was studied on the basis of the results of electrical and optical measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9878eebafee17dedc11629c9125433
https://doi.org/10.1134/1.1548659
https://doi.org/10.1134/1.1548659
Autor:
V. T. Maslyuk, S. M. Chupyra, I. I. Zabolotskiy, O. M. Mysliuk, O. G. Grushka, S. V. Bilichuk
Publikováno v:
Semiconductors. 46:312-314
The results of studying the electrical properties of Hg3In2Te6 crystals irradiated with electrons with the energy E e = 18 MeV and the dose D = 4 × 1016 cm−2 are reported. It is shown that, irrespective of the charge-carrier concentration in the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::059f08c5bf007c980b98e56d6ecb125e
https://doi.org/10.1134/s1063782612030128
https://doi.org/10.1134/s1063782612030128
Publikováno v:
Semiconductors. 36:501-504
The effect of chromium doping on the energy spectrum of the density of states N(E) in the band gap of the Hg3In2Te6 semiconductor compound was studied. Although the chromium impurity has no significant effect on the electrical properties and the Ferm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d966cd223e4e661c6c0b1f8215960e5e
https://doi.org/10.1134/1.1478539
https://doi.org/10.1134/1.1478539
Publikováno v:
Semiconductors. 45:49-51
The effect of electric field and temperature on the conductivity of bulk Hg3In2Te6 crystals is investigated. It is shown that the I–V characteristics in high electric fields are of the S type with the effect of switching into a low-resistance state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadb2ef5d21049f2cbb6b480c4af17dd
https://doi.org/10.1134/s106378261101009x
https://doi.org/10.1134/s106378261101009x