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pro vyhledávání: '"O. G. Gimchinsky"'
Autor:
M. D. Raransky, J. N. Bonarsky, V. M. Godovaniouk, O. G. Gimchinsky, Z. Swiatek, L. L. Gultaj, Igor M. Fodchuk
Publikováno v:
SPIE Proceedings.
Research of structural changes in subsurface layers of Si single crystals during formatting amorphous layers hidden under the surface are carried out. Is established, that phosphorus ion (with 180 keV energy and doze of the order 1015 iopJcm2)implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a067400baf8043ea05f6650de19bcf
https://doi.org/10.1117/12.370438
https://doi.org/10.1117/12.370438
