Zobrazeno 1 - 5
of 5
pro vyhledávání: '"O. F. Zadorozhny"'
Autor:
V. N. Davydov, O. F. Zadorozhny
Publikováno v:
Russian Physics Journal. 65:893-903
Autor:
V. N. Davydov, O. F. Zadorozhny
Publikováno v:
Russian Physics Journal. 65:732-743
Publikováno v:
Russian Physics Journal. 64:534-538
The measurements of the phonon spectrum of a LED heterostructure based on the In0.12Ga0.88N/GaN barrier showed the presence of four phonon radiation peaks with energies of 0.193, 0.207, 0.353, and 0.356 eV. It was assumed from the comparison of the c
Autor:
V. N. Davydov, O. F. Zadorozhny
Publikováno v:
Russian Physics Journal. 62:1770-1778
It is established that the model of interband radiative recombination in a semiconductor under bipolar injection of charge carriers, in which the recombination rate is described by the product of the total charge carrier concentrations, does not take
Publikováno v:
Russian Physics Journal. 62:499-504
Realization of a criterion of dimensional quantization in quantum wells of various profiles is considered. It is established that there is the limit number of the discrete state of a free charge carrier in the well, above which the criterion of dimen