Zobrazeno 1 - 10
of 35
pro vyhledávání: '"O. F. Vyvenko"'
Hexagonal boron nitride is a wide band gap semiconductor exhibiting various luminescence bands in visible and near ultraviolet range, which can be used as single photon source. The luminescence band with zero phonon line at 4.1 eV is commonly ascribe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43dd441726abac27caa0ed1782a2e2aa
https://doi.org/10.17169/refubium-33797
https://doi.org/10.17169/refubium-33797
Autor:
Gordon Schmidt, Sebastian Metzner, Peter Veit, S V Shapenkov, O F Vyvenko, Juergen Christen, F. Bertram
Publikováno v:
Journal of Physics: Conference Series. 1851:012013
Freshly introduced a-screw dislocations in gallium nitride are an effective source of ultraviolet radiation, characterized by intense emission of narrow luminescence doublet lines in the spectral range of 3.1-3.2 eV. Furthermore, an additional narrow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07afe972166ba8cbf0ae3f4825b3e7b6
https://doi.org/10.1088/1742-6596/1851/1/012013
https://doi.org/10.1088/1742-6596/1851/1/012013
Publikováno v:
Journal of Physics: Conference Series. 1482:012003
The peculiarities of electron emission from electronic states of nanodefects formed at the early stages of oxygen precipitation in oxygen-implanted silicon annealed at 700°C were investigated with a combination of capacitance and current transient s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ebcff2d25f02bd3dc372968f0d26b0f
https://doi.org/10.1088/1742-6596/1482/1/012003
https://doi.org/10.1088/1742-6596/1482/1/012003
Publikováno v:
Journal of Physics: Conference Series. 1190:012008
The impact of the dislocations introduced by local plastic deformation on the electric properties of low-ohmic n-GaN was investigated. It was found that the freshly introduced dislocations gave rise to increase of the dc leakage current, to changes i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c6bd266996e709326b30e6b681a77d
https://doi.org/10.1088/1742-6596/1190/1/012008
https://doi.org/10.1088/1742-6596/1190/1/012008
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:792-795
The principles and features of operation of a scanning helium microscope are reviewed briefly. The measurement data on the energy distribution of secondary electrons excited by the ion beam in an Au film and on the angular dependence of the backscatt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8dc49f5e4797e52beca60b45c66649
https://doi.org/10.1134/s1027451010050186
https://doi.org/10.1134/s1027451010050186
Autor:
Michael Seibt, Evgeniy Ubyivovk, Oleg N. Medvedev, S. V. Shapenkov, P. Saring, O. F. Vyvenko, Anton Bondarenko
Publikováno v:
Journal of Applied Physics. 123:161427
Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1b3575c00064aa411637bcf1f06f34
https://doi.org/10.1063/1.5011368
https://doi.org/10.1063/1.5011368
Autor:
O. F. Vyvenko, I. Ya. Gerlovin, A. A. Sitnikova, Yu. P. Efimov, D. K. Loginov, E. V. Ubyĭvovk, Yu. K. Dolgikh, Demid A. Kirilenko, V. V. Petrov, S. A. Eliseev
Publikováno v:
Physics of the Solid State. 51:1929-1934
The thickness of the GaAs “dead layer” in the GaAs/AlGaAs heterostructure has been directly measured. The widths of the dead layer obtained in the experiment are compared with the values for the same material interfacing with the external medium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b836957c5465076eec5301a884f3aa60
https://doi.org/10.1134/s1063783409090273
https://doi.org/10.1134/s1063783409090273
Autor:
Michael Seibt, Winfried Seifert, A. Wolff, Mario Birkholz, Martin Kittler, W. Fritzsche, O. F. Vyvenko, Tzanimir Arguirov, Manfred Reiche, T. Wilhelm, Xuegong Yu
Publikováno v:
Materials Science and Engineering: C. 26:902-910
Defined placement of biomolecules at Si surfaces is a precondition for a successful combination of Si electronics with biological applications. We aim to realize this by Coulomb interaction of biomolecules with dislocations in Si. The dislocations fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6dea7bfc93018f97502bdfbc204b462
https://doi.org/10.1016/j.msec.2005.09.047
https://doi.org/10.1016/j.msec.2005.09.047
Publikováno v:
Journal of Physics: Condensed Matter. 16:S141-S151
In this study we report applications of the synchrotron radiation based x-ray microprobe techniques, x-ray beam induced current (XBIC) and microprobe x-ray fluorescence (μ-XRF), to the analysis of the recombination activity and spatial distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::268ea925b0b2fae241151b9b8b10063a
https://doi.org/10.1088/0953-8984/16/2/017
https://doi.org/10.1088/0953-8984/16/2/017
Autor:
O. F. Vyvenko, Tonio Buonassisi, M. Heuer, Eicke R. Weber, R. Schindler, Andrei A. Istratov, T.F. Ciszek, Barry Lai, Zhonghou Cai
Publikováno v:
Physica B: Condensed Matter. :1137-1141
A high flux, non-destructive X-ray synchrotron-based technique, X-ray fluorescence microscopy (μ-XRF), is able to detect metal precipitates as small as a few tens of nanometers in diameter within a silicon matrix, with micron-scale spatial resolutio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fbdb4e4f3990ec34d4f9e6c55f14bcc
https://doi.org/10.1016/j.physb.2003.09.099
https://doi.org/10.1016/j.physb.2003.09.099