Zobrazeno 1 - 10
of 10
pro vyhledávání: '"O. F. Kolomys"'
Autor:
Yu. I. Venhryn, I. D. Popovych, A. S. Serednytski, O. F. Kolomys, A. P. Luchechko, V. V. Strelchuk
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:10715-10722
Autor:
T. M. Pinchuk-Rugal, V. M. Popruzhko, O. P. Dmytrenko, M. P. Kulish, M. A. Alieksandrov, A. I. Misiura, A. P. Onanko, A. I. Momot, T. O. Busko, O. F. Kolomys
Publikováno v:
Springer Proceedings in Physics ISBN: 9783031181030
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d38c7225925c8eb6abdc23d9129608d
https://doi.org/10.1007/978-3-031-18104-7_20
https://doi.org/10.1007/978-3-031-18104-7_20
Autor:
T. M. Pinchuk-Rugal, A. P. Onanko, M. A. Alieksandrov, O. F. Kolomys, V. V. Strelchuk, O. L. Pavlenko, Yu. E. Grabovskiy, M. P. Kulish, O. P. Dmytrenko
Publikováno v:
Springer Proceedings in Physics ISBN: 9783030522674
The change in the degree of crystallinity and dynamic elastic, shear modulus in pure polyvinyl chloride (PVC) and its composites with methylene blue dye (MB) up to 0.07 vol. fract. were investigated with X-ray diffraction and the spread of high-frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c9a55bc62c28562195d070d678144b3
https://doi.org/10.1007/978-3-030-52268-1_20
https://doi.org/10.1007/978-3-030-52268-1_20
Publikováno v:
Molecular Crystals and Liquid Crystals. 672:41-53
The structural phase transitions in the intercalate layer in bromine intercalated compounds based on fine crystalline anisotropic graphite are investigated by the Raman spectroscopy method. The cha...
Autor:
Viktor Strelchuk, P. S. Shmegera, O. M. Kaidash, I. P. Fesenko, S. V. Tkach, V. B. Galyamin, O. F. Kolomys, H. Vollstädt, M. P. Gadzyra, T. B. Serbenyuk, O. O. Lyeshchuk, Yu. I. Azima, N. K. Davydchuk, V. I. Chasnyk, H. Recht, E. I. Fesenko, E. F. Kuz’menko
Publikováno v:
Journal of Superhard Materials. 37:73-81
Samples of composite with ceramic matrix of aluminum nitride have been produced by pressureless sintering of the AlN-Y2O3 powder compositions with addition of SiC-C particles of size 50 nm (agglomerates of 200 nm). The presence of a SiC solid solutio
Autor:
Ya. B. Blume, P. S. Smertenko, V. O. Glazunova, O. M. Burlaka, O. F. Kolomys, Ya. V. Pirko, T. E. Konstantinova, Alla I. Yemets
Publikováno v:
Reports of the National Academy of Sciences of Ukraine. :137-144
Autor:
O. M. Burlaka, Ya. V. Pirko, O. F. Kolomys, P. S. Smertenko, V. O. Glazunova, T. E. Konstantinova, A. I. Yemets, Ya. B. Blume
Publikováno v:
Biotechnologia Acta.
To select the effective methods for functionalizing carbon nanotubes and to compare the ability of a number of biological molecules (plasmid DNA, ATP, mix of deoxyribonucleoside triphosphates, bovine serum albumin, compounds of vitreous humor extract
Autor:
A. M. Svetlichnyi, O. B. Spiridonov, R. V. Konakova, O. F. Kolomys, M. N. Grigoriev, E. Yu. Volkov, Viktor Strelchuk, O.B. Okhrimenko
Publikováno v:
Semiconductors. 47:812-814
The raman scattering (RS) spectra of graphene on semi-insulating and conductive 6H-SiC substrates formed by preliminary and additional annealing of silicon carbide at various temperatures are studied. The degree of perfection of the graphene films an
Autor:
Semen Budennyy, Mikhail A. Putyato, Anton K. Gutakovskii, T. S. Shamirzaev, Viktor Strelchuk, V. V. Preobrazhenskii, D. S. Abramkin, O. F. Kolomys, B. R. Semyagin
Publikováno v:
Journal of Applied Physics. 112:083713
The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP
Autor:
O. F. Kolomys, I. V. Prokopenko, Gregory J. Salamo, Yu. I. Mazur, Michael Hanke, M. Ya. Valakh, Petr M. Lytvyn, Viktor Strelchuk, Zh. M. Wang
Publikováno v:
Applied Physics Letters. 91:173118
We have investigated lateral self-assembling in In0.4Ga0.6As∕GaAs quantum dot (QD) multilayers, which were grown by molecular beam epitaxy on GaAs(100) and (n11)B substrates with n=9,8,7,5,4,3. The lateral self-assembling and the QD size distributi