Zobrazeno 1 - 10
of 13
pro vyhledávání: '"O. Ecin"'
The authors report on a novel linear time-invariant (LTI) modeling of a flow sensor system based on thermal Time-of-Flight (TOF) principle by using pulsed hot wire anemometry. Thermal heat pulses are electrically generated at the hot wire centered in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f126159ee6ce8fa1c715393db807b0e
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84873976710
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84873976710
Publikováno v:
ECCTD
This article describes a pulsed thermal Time-of-Flight (TTOF) flow sensor system as two subsystems i.e., a pulsed-wire system and a heat flow system. The entire flow sensor is regarded system-theoretically as a linear time-invariant (LTI) system and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ee3964b0813a338c73ef12e66f38978
https://doi.org/10.1109/ecctd.2011.6043374
https://doi.org/10.1109/ecctd.2011.6043374
Publikováno v:
Proceedings SENSOR 2011.
The use of mass and volume flow measurement techniques is essential in industries for process control purposes. Therefore, a novel flow measurement principle based on the Thermal Time-of-Flight (TToF) is applied with the methods of heat transfer incl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c265d7f9bf5be656b3569c5bd74d3422
https://doi.org/10.5162/sensor11/d4.4
https://doi.org/10.5162/sensor11/d4.4
Autor:
B Strathen, Reinhard Viga, Bedrich Hosticka, O. Ecin, D. Gu, E. Engelien, Anton Grabmaier, M. Malek
Publikováno v:
3rd Electronics System Integration Technology Conference ESTC.
Thermal flow measurement is currently based on the principle of heat energy displacement caused by a flowing fluid (mass flow measurement). The heat is induced by a continuous heating element immersed into the fluid. This kind of sensor is only appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::855b06ee21019825eecf98a0018f5828
https://doi.org/10.1109/estc.2010.5642983
https://doi.org/10.1109/estc.2010.5642983
Autor:
Zhe Xu, E. Dogheche, A. Malcoci, Mario Weiß, S.P. McAlister, T. K. Ng, J. F. Lampin, J. A. Gupta, S. Fedderwitz, S.F. Yoon, A. Söhr, Kian Hua Tan, A. Poloczek, Dieter Jäger, Salim Faci, K. L. Lew, Satrio Wicaksono, J. Chazelas, Wan Khai Loke, Didier Decoster, C. Tripon-Canseliet, O. Ecin, Y. K. Sim, Malek Zegaoui, N. Saadsaoud
Publikováno v:
ECS Transcations
215th ECS Meeting
215th ECS Meeting, May 2009, San francisco, United States. pp.5-29, ⟨10.1149/1.3120682⟩
215th ECS Meeting, State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) and Processes at the Semiconductor Solution Interface 3
215th ECS Meeting, State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) and Processes at the Semiconductor Solution Interface 3, 2009, San Francisco, CA, United States. ⟨10.1149/1.3120682⟩
215th ECS Meeting
215th ECS Meeting, May 2009, San francisco, United States. pp.5-29, ⟨10.1149/1.3120682⟩
215th ECS Meeting, State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) and Processes at the Semiconductor Solution Interface 3
215th ECS Meeting, State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) and Processes at the Semiconductor Solution Interface 3, 2009, San Francisco, CA, United States. ⟨10.1149/1.3120682⟩
International audience; This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ffa5285f5d51fc79bed5c3cc5d43b50
https://hal.sorbonne-universite.fr/hal-00620077
https://hal.sorbonne-universite.fr/hal-00620077
Autor:
Wan Khai Loke, O. Ecin, A. Malcoci, A. Poloczek, Andreas Stohr, Kian Hua Tan, K. L. Lew, Soon Fatt Yoon, Satrio Wicaksono, Dieter Jäger
Publikováno v:
Applied Physics Letters. 90:183515
The authors report on picosecond pulse response GaNAsSb∕GaAs p-i-n photodetectors grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source. The 2μm thick GaNAsSb photoabsorption layer contains 3.3% of N and 8% of Sb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33404a5f5f847d0d201f4e1858705a1d
https://doi.org/10.1063/1.2730585
https://doi.org/10.1063/1.2730585
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