Zobrazeno 1 - 10
of 52
pro vyhledávání: '"O. E. Schow"'
Autor:
L. H. Jenkins, J. W. Miller, Bill R. Appleton, D. M. Zehner, T.S. Noggle, J.H. Barrett, O. E. Schow
Publikováno v:
Journal of Vacuum Science and Technology. 12:454-457
An extensive investigation of the atomic arrangement on the (001) Au surface has been performed using the techniques of positive−ion−channeling spectroscopy (PICS), LEED, and AES. Both the normal surface in which the Au atoms are ordered in a squ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d063b7a5bbde4f30e7990bed485543f
https://doi.org/10.1116/1.568600
https://doi.org/10.1116/1.568600
Publikováno v:
Nuclear Instruments and Methods in Physics Research. :303-307
Rutherford backscattering and channeling analysis of high dose, room temperature implanted Ge has revealed an anomalous near-surface yield deficit. The effect is attributed to the absorption of oxygen and other light mass contaminants into a highly p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b297bdca849b4fe8fc31c89c2be27b
https://doi.org/10.1016/0167-5087(83)90815-3
https://doi.org/10.1016/0167-5087(83)90815-3
Publikováno v:
Physical Review B. 27:1276-1282
Optical-absorption measurements show that ${\mathrm{H}}^{\ensuremath{-}}$ ions are thermally much more stable than anion vacancies when thermochemically reduced MgO samples are annealed in a reducing atmosphere. At 1900 K all anion vacancies are anni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7a86a1d6a0bfe954b9263091c9fff62
https://doi.org/10.1103/physrevb.27.1276
https://doi.org/10.1103/physrevb.27.1276
Publikováno v:
Journal of Physics C: Solid State Physics. 3:2501-2508
Oxygen ion vacancies, which absorb light at 250 nm, are observed in 'pure' mgo after irradiation with 0.23-29 mev electrons. The threshold energy for anion vacancy formation is observed to occur at 0.33 mev; this corresponds to a displacement energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db8edd96227a305210c0ade1d7de56f
https://doi.org/10.1088/0022-3719/3/12/016
https://doi.org/10.1088/0022-3719/3/12/016
Publikováno v:
Journal of Applied Physics; 6/7/2023, Vol. 133 Issue 21, p1-12, 12p
Autor:
B. R. Appleton, D. M. Zehner, T. S. Noggle, J. W. Miller, O. E. Schow, L. H. Jenkins, J. H. Barrett
Publikováno v:
Ion Beam Surface Layer Analysis ISBN: 9781461588818
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ee4c76126b14d4c3b290eca663def95
https://doi.org/10.1007/978-1-4615-8879-5_9
https://doi.org/10.1007/978-1-4615-8879-5_9
Autor:
K.T. Short, E.M. Lawson, James Williams, O. E. Schow, O. W. Holland, Bill R. Appleton, Jagdish Narayan
Publikováno v:
Applied Physics Letters. 41:711-712
It has been observed that ion implantation into Ge at room temperature creates severe surface craters extending several thousand angstroms into the surface, and results in the incorporation of large quantities of C and O impurities (∼50 impurities/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032f6261a23247ed68de91d02dcda1b5
https://doi.org/10.1063/1.93643
https://doi.org/10.1063/1.93643
Autor:
Köhler, Thomas, Reichart, Patrick, Brendler, Erica, Vyalikh, Anastasia, Klostermeier, Andre, Siketić, Zdravko, Mehner, Erik, Dollinger, Günther, Stöcker, Hartmut, Meyer, Dirk C.
Publikováno v:
Journal of Materials Chemistry A; 10/21/2023, Vol. 11 Issue 39, p21183-21202, 20p
Publikováno v:
Journal of Chemical Physics; 2/14/2021, Vol. 154 Issue 6, p1-9, 9p
Autor:
Huang, Hsien-Lien, Chae, Christopher, Johnson, Jared M., Senckowski, Alexander, Sharma, Shivam, Singisetti, Uttam, Wong, Man Hoi, Hwang, Jinwoo
Publikováno v:
APL Materials; Jun2023, Vol. 11 Issue 6, p1-12, 12p