Zobrazeno 1 - 10
of 80
pro vyhledávání: '"O. Drisse"'
Autor:
B. Duval, J.L. Gentner, Fabrice Blache, Karim Mekhazni, Sophie Barbet, Christophe Caillaud, Helene Debregeas, Romain Brenot, B. Saturnin, F. Lelarge, G. Glastre, Michel Goix, O. Drisse, T. D. H. Nguyen, F. Pommereau, Mohand Achouche, D. Lanteri, E. Derouin, F. Martin, Alexandre Garreau, Catherine Fortin, J.-G. Provost, J.-F. Paret, Philippe Charbonnier, Y. Moustapha-Rabault
Publikováno v:
OFC
We present an electro-absorption modulated laser with 6dBm modulated power leading to record power budget NRZ transmissions at 1.55μm: 37dB at 10Gb/s over 50km and 30dB at 28Gb/s over 10km with a pre-amplified photodiode.
Autor:
J. Bébé Manga Lobé, Michel Calligaro, Michael Tran, M. Carbonnelle, A. Larrue, Marco Lamponi, Olivier Parillaud, E. Vinet, C. Cayron, Nicolas Michel, Y. Robert, Michel Garcia, N. von Bandel, Michel Krakowski, V. Ligeret, Roberto Mostallino, Michel Lecomte, O. Drisse
Publikováno v:
Quantum Sensing and Nanophotonic Devices XII.
Laser diodes emitting at different wavelengths can address various applications. 852nm or 894nm single frequency low linewidth laser diodes are needed for Cs pumping for realization of atomic clocks. 780nm high power low linewidth laser diodes and am
Autor:
O. Parillaud, E. Vinet, A. Larrue, Y. Robert, O. Drisse, P. Resneau, Marco Lamponi, M. Garcia, Michael Maria, M. Lecomte, M. Krakowski, R. Mostallino
Publikováno v:
2014 International Semiconductor Laser Conference.
A DFB broad area laser, using an Al free active region structure, emitting at 976nm with low spectral width, below 1nm, and low wavelength evolution is reported, with an output power exceeding 3W.
Autor:
Christophe Gaquiere, M. Magis, Sylvain Delage, M. Oualli, Erwan Morvan, N. Sarazin, M.-A. di Forte Poisson, O. Drisse, M. Tordjman, Olivier Jardel
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩
IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩
High-frequency high-electron-mobility transistors (HEMTs) were fabricated on AlInN/AlN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate. The results presented in this letter confirm the high perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ca5499a70cf0b42b339e4be59c0209
https://hal.science/hal-00549451
https://hal.science/hal-00549451
Autor:
F. Martin, O. Drisse, F. Poingt, L. LeGouezigou, F. Pommereau, Francois Lelarge, E. Derouin, B. Rousseau, O. Le Gouezigou, Romain Brenot, Gilles Patriarche
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
We demonstrate that the combination of Quantum Dots and Quantum Dashes (QD) structures with buried ridge stripe technology allows to achieve QD semiconductor amplifier (SOA) with an internal gain of 30dB for an injected current of 350mA. Using optimi
Autor:
Z. Ouarch, T. Dean, Tibault Reveyrand, Erwan Morvan, M. A. Di-Forte Poisson, Eric Chartier, Raphaël Aubry, N. Sarazin, D. Thenot, T. Bouvet, Jean-Claude Jacquet, Olivier Jardel, Sylvain Delage, D. Lancereau, Didier Floriot, Y. Gourdel, O. Drisse, Christian Dua, Audrey Martin, J.O. McLean, S. Bansropun, A.J. Hydes, Stéphane Piotrowicz, G. Lecoustre, M. Richard
Publikováno v:
IEEE Compound Semiconductor IC Symposium CSICS 2008
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2
Autor:
Viktor Krozer, P. Berdaguer, Virginie Nodjiadjim, Jean-Yves Dupuy, J. Moulu, E. Derouin, André Scavennec, J.L. Gentner, O. Drisse, Muriel Riet, Tom K. Johansen, F. Jorge, Jean Godin, Agnieszka Konczykowska
Publikováno v:
Godin, J, Nodjiadjim, V, Riet, M, Berdaguer, P, Drisse, O, Derouin, E, Konczykowska, A, Moulu, J, Dupuy, J-Y, Jorge, F, Gentner, J-L, Krozer, V, Johansen, T K & Scavennec, A 2008, Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs . in Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium . IEEE, Compound Semiconductor Integrated Circuits Symposium, 01/01/2008 . https://doi.org/10.1109/CSICS.2008.28
We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attenti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f77186089667c4aec9e603f084b145a
https://orbit.dtu.dk/en/publications/7e72c4ba-36b4-4a86-a939-733b3673ddf9
https://orbit.dtu.dk/en/publications/7e72c4ba-36b4-4a86-a939-733b3673ddf9
Autor:
A. De Rossi, Michel Krakowski, Xavier Marcadet, O. Drisse, Mathieu Carras, María C. Nápoles García, Shailendra Bansropun
Publikováno v:
2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.
We demonstrate of a metal grating purely index coupled distributed feedback quantum cascade Lasers at around 7.5mum. It presents a large tuning without broadband gain and side mode suppression ratio above 30 dB.
Autor:
O. Drisse, M. Alloui, Christophe Gaquiere, M. Magis, M.-A. di Forte Poisson, Didier Theron, Sylvain Delage, N. Vellas, Raphaël Aubry, M. Laurent, N. Sarazin, M. Tordjman, Olivier Jardel, J. Di Persio, Erwan Morvan
Publikováno v:
Electronics Letters
Electronics Letters, 2007, 43 (23), pp.1317-1318. ⟨10.1049/el:20072598⟩
Electronics Letters, IET, 2007, 43, pp.1317-1318. ⟨10.1049/el:20072598⟩
Electronics Letters, 2007, 43 (23), pp.1317-1318. ⟨10.1049/el:20072598⟩
Electronics Letters, IET, 2007, 43, pp.1317-1318. ⟨10.1049/el:20072598⟩
International audience; AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40404a4a4f2209f6a3d93aa7c01f7d2d
https://hal.science/hal-00283494
https://hal.science/hal-00283494
Autor:
F. Pommereau, M. Attali, R. Brenot, C. Cuisin, E. Derouin, O. Drisse, G.H. Duan, J. Landreau, L. Le Gouezigou, O. Le Gouezigou, F. Lelarge, F. Poingt, B. Rousseau
Publikováno v:
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.
This invited paper gives an overview of the recent advances on two-dimensional photonic crystals on InP based materials. In particular, the fabrication approach developed at Alcatel-Thales III-V Lab is described in detail. Optical characterisation of