Zobrazeno 1 - 10
of 42
pro vyhledávání: '"O. Dorsch"'
Publikováno v:
Diamond and Related Materials. 5:644-648
An accurate technique to measure the thermal conductivity k(T) of CVD diamond based on new micromechanical devices is presented. The thermal conductivity parallel to the surface of films with thicknesses ranging from 2 to several hundred μm can be d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b9054dce4fd74286d83f391e2bbfbe
https://doi.org/10.1016/0925-9635(95)00404-1
https://doi.org/10.1016/0925-9635(95)00404-1
Autor:
Colin Johnston, Matthew Werner, E. Obermeier, Paul R. Chalker, H. U. Baerwind, S. Romani, O. Dorsch
Publikováno v:
IEEE Transactions on Electron Devices. 42:1344-1351
Three metallization schemes, namely Al/Si, Ti-Au and TiWN-Au contacts on B-doped polycrystalline diamond films have been compared. After annealing at 450/spl deg/C in nitrogen Al/Si contacts show the lowest contact resistivity in the order of /spl si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ded298b77cf648f7cb359416152bc02
https://doi.org/10.1109/16.391217
https://doi.org/10.1109/16.391217
Publikováno v:
Diamond and Related Materials. 4:873-876
Pressure sensors with boron-doped, mesa-etched polycrystalline diamond piezoresistors on top of a silicon square membrane (1300 μm × 1300 μm × 30 μm) were manufactured. Electrical insulation of the boron-doped piezoresistors from the silicon sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::038ca2b603a4873c300c5e78d4196e66
https://doi.org/10.1016/0925-9635(94)05231-x
https://doi.org/10.1016/0925-9635(94)05231-x
Publikováno v:
Diamond and Related Materials. 4:456-459
This paper describes etching of polycrystalline diamond films by reactive ion etching (RIE) in an O2 plasma. The RIE patterned films showed anisotropic etching profiles. During RIE, columnar structures were created on the etched surface., Changes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60987a1db686c390a0ac338e17ba42c6
https://doi.org/10.1016/0925-9635(94)05318-9
https://doi.org/10.1016/0925-9635(94)05318-9
Autor:
E. Obermeier, K. Holzner, I.M. Buckley-Golder, Paul R. Chalker, R.E. Harper, Colin Johnston, M. Werner, O. Dorsch
Publikováno v:
Scopus-Elsevier
Double-layer structures consisting of a nominally undoped diamond film and an overlying boron-doped diamond film on Si substrates were used for investigations into the piezoresistive effect of polycrystalline diamond films. Various resistor structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aa4f188d7a9423fcc8e1ac35a28cb28
https://doi.org/10.1016/0925-9635(93)90279-b
https://doi.org/10.1016/0925-9635(93)90279-b
Publikováno v:
Diamond and Related Materials. 1:277-280
Amorphous carbon films and doped and undoped polycrystalline diamond films were patterned with RIE in an oxygen plasma. Insitu measurement of the etch rate gave different, depth-dependent etch rate values. For the amorphous films, an etch rate of 150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::852b4b91fa54ce343b2a217adfc88e6c
https://doi.org/10.1016/0925-9635(92)90039-q
https://doi.org/10.1016/0925-9635(92)90039-q
Autor:
O, Dorsch
Publikováno v:
Deutsche medizinische Wochenschrift (1946). 133(16)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a7518bcffd4b1baecc956ff7ae1552b1
https://pubmed.ncbi.nlm.nih.gov/18398791
https://pubmed.ncbi.nlm.nih.gov/18398791
Akademický článek
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Autor:
H. U. Baerwind, Colin Johnston, A. Ersoy, O. Dorsch, V. Moore, S. Romani, Paul R. Chalker, E. Obermeier, M. Werner, I.M. Buckley-Golder
Publikováno v:
Scopus-Elsevier
The effects on the contact resistivity of annealing Al Si (99:1) contacts on diamond with different B concentrations have been investigated. The change of the current-voltage characteristic from rectifying to ohmic on lightly doped samples, and the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33b89528b56b1f495c2c1321ec507092
https://doi.org/10.1016/0925-9635(94)90313-1
https://doi.org/10.1016/0925-9635(94)90313-1
Autor:
Paul R. Chalker, E. Obermeier, L. Haase, O. Dorsch, W. Seifert, Hugh E. Bishop, Matthew Werner, H. U. Baerwind, Colin Johnston, Simon Romani, A. Ringhandt
Publikováno v:
Applied Physics Letters. 64:595-597
Temperature‐dependent conductivity and Hall measurements have been carried out on heavily in situ B‐doped polycrystalline diamond films in a temperature range from ∼100 to 750 K. The slope of the conductivity is clearly non‐Arrhenius leading
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ccd9f54a545b7c4c739a0c6322be3df
https://doi.org/10.1063/1.111088
https://doi.org/10.1063/1.111088