Frequency modulation of conductance level in PCM device for neuromorphic applications

Autor: A. Trabelsi, C. Cagli, T. Hirtzlin, O. Cueto, M. C. Cyrille, E. Vianello, V. Meli, V. Sousa, G. Bourgeois, F. Andrieu

Publikováno v: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9171e4c9feb2091247445bdd14f59ea5
https://doi.org/10.1109/esscirc55480.2022.9911461

Innovative Low-Power Self-Nanoconfined Phase-Change Memory

Autor: Gauthier Lefevre, C. Sabbione, Sylvain David, Etienne Nowak, J. Garrione, N. Castellani, Marie-Claire Cyrille, Anna Lisa Serra, Nicolas Bernier, Christophe Vallée, Guillaume Bourgeois, Gabriele Navarro, Mathieu Bernard, O. Cueto, Christelle Charpin-Nicolle

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩

International audience; In this paper, we demonstrate at array level and in industrial like devices, the extreme scaling down to nanometric dimensions of the Phase-Change Memory technology thanks to an innovative Self-Nano-Confined PCM device (SNC PC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a85ded2bac29098bfe311f43f120a78b
https://hal-cea.archives-ouvertes.fr/cea-03119677/document

Coupling the Multi Phase-Field Method with an Electro-Thermal Solver to Simulate Phase Change Mechanisms in Ge-rich GST based PCM

Autor: Hervé Henry, T. Philippe, Serge Blonkowski, O. Cueto, Raphael Bayle, Mathis Plapp

Publikováno v: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

The ternary alloy GeSbTe is widely used as material for phase-change memories. Thanks to an optimized Ge-rich GeSbTe alloy, the crystallizion temperature of the alloy is increased and the stability requirements of high working temperature required fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a7b985bc1bbdc59c346573c7d0e27c5
https://doi.org/10.23919/sispad49475.2020.9241619

Outstanding Improvement in 4Kb Phase-Change Memory of Programming and Retention Performances by Enhanced Thermal Confinement

Autor: Etienne Nowak, N. Castellani, Guillaume Bourgeois, Nicolas Bernier, V. Beugin, A. Andre, J. Sandrini, O. Cueto, Mathieu Bernard, J. Garrione, Marie-Claire Cyrille, Anna Lisa Serra, Gabriele Navarro, J. Guerrero

Publikováno v: 2019 IEEE 11th International Memory Workshop (IMW).

In this paper we present the optimization of the thermal confinement of a heater-based Phase-Change Memory (PCM) integrating a Ge-rich Ge-Sb-Te alloy (GGST) by the engineering of the encapsulation dielectric layer. Lower thermal conductivity of a SiC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c02eb5e10434be221a01f8c9b119bef6
https://doi.org/10.1109/imw.2019.8739588

Narrow Heater Bottom Electrode-Based Phase Change Memory as a Bidirectional Artificial Synapse

Autor: Guillaume Bourgeois, Barbara De Salvo, D. R. B. Ly, Elisa Vianello, Selina La Barbera, Etienne Nowak, O. Cueto, Gabriele Navarro, Damien Querlioz, N. Castellani

Publikováno v: Advanced Electronic Materials
Advanced Electronic Materials, 2018, 4 (9), pp.1800223. ⟨10.1002/aelm.201800223⟩
Advanced Electronic Materials, Wiley, 2018, 4 (9), pp.1800223. ⟨10.1002/aelm.201800223⟩

International audience; Phase change memory can provide a remarkable artificial synapse for neuromorphic systems, as it features excellent reliability and can be used as an analog memory. However, this approach is complicated by the fact that crystal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1a62efd41ca3fd195476f35facd27b6
https://cea.hal.science/cea-02183803