Zobrazeno 1 - 10
of 54
pro vyhledávání: '"O. Chernyashevskyy"'
Autor:
O. Chernyashevskyy, Oleg A. Mukhanov, Ivan P. Nevirkovets, John B Ketterson, Serhii Shafraniuk, Daniel Yohannes
Publikováno v:
IEEE Transactions on Applied Superconductivity. 27:1-4
We report the results of a study of the current gain in high Josephson critical current density ( j ${}_{\rm c}$ ) superconducting-ferromagnetic transistors with the SISFIFS structure [where S, I, and F denote a superconductor (Nb), an insulator (AlO
Autor:
John B Ketterson, Serhii Shafraniuk, Oleg A. Mukhanov, Daniel Yohannes, O. Chernyashevskyy, Ivan P. Nevirkovets
Publikováno v:
IEEE Transactions on Applied Superconductivity. 26:1-7
We report experimental and theoretical results on the current gain in superconductor-ferromagnetic transistors (SFTs) with the SISFIFS structure [where S, I, and F denote a superconductor (Nb), an insulator ( ${\rm{AlO}}_{x}$ ), and a ferromagnetic m
Autor:
Georgy Prokopenko, Oleg A. Mukhanov, O. Chernyashevskyy, John B Ketterson, Ivan P. Nevirkovets
Publikováno v:
IEEE Transactions on Applied Superconductivity. 25:1-5
We report experimental results on characteristics of SFIFS junctions and multiterminal SFIFSIS and SISFIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS (SFIS)
Autor:
Georgy Prokopenko, Oleg A. Mukhanov, O. Chernyashevskyy, John B Ketterson, Ivan P. Nevirkovets
Publikováno v:
IEEE Transactions on Applied Superconductivity. 24:1-6
We report experimental results on the dc and ac characterization of multiterminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator $(\hbox{AlO}_{x})$ , and a ferromagnetic material (Ni), respectively), which display trans
Publikováno v:
Low Temperature Physics. 40:191-198
We report on properties of Nb(/Ti)–carbon–(Ti/)Nb junctions fabricated on graphite flakes using e-beam lithography. The devices were characterized at temperatures above 1.8 K where a Josephson current was not observed, but the differential conduc
Publikováno v:
IEEE Transactions on Applied Superconductivity. :1-1
We report the fabrication and characterization at 4.2 K of superconducting-ferromagnetic (SIFS) switching devices that are configured in an injection-controlled weak link geometry (ICWL). Here, S, I, and F denote a superconductor (Nb), an insulator (
Autor:
Bimal K. Sarma, Vitali V. Metlushko, K. Rivkin, Ivan P. Nevirkovets, John B Ketterson, O. Chernyashevskyy
Publikováno v:
Journal of Magnetism and Magnetic Materials. 321:3324-3329
A number of studies have shown that ferromagnetic resonance linewidths in magnetic thin films contain a significant contribution due to processes, such as inhomogeneous broadening and two-magnon scattering followed by decay to the phonon thermal bath
Autor:
Cedomir Petrovic, Ivan P. Nevirkovets, O. Chernyashevskyy, Rongwei Hu, Bimal K. Sarma, John B Ketterson
Publikováno v:
Physica C: Superconductivity. 469:293-296
We report characteristics of CeCoIn 5 /Al/AlO x /Nb and CeCoIn 5 /Al/AlO x /Al tunnel junctions fabricated on the (0 0 1) surface of CeCoIn 5 crystal platelets. The main result of this work is the observation of a low Josephson current (as compared w
Publikováno v:
2015 15th International Superconductive Electronics Conference (ISEC).
The superconductor-ferromagnetic transistors (SFTs) with the SISFIFS structure (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively) are promising for various applications in supercondu
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 15:129-132
We fabricated and measured multi-terminal SINIS devices (where S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with the Nb/Al/AlO/sub x//Al/AlO/sub x//Al/Nb structure. The multilayered SINIS structure was fabricat