Zobrazeno 1 - 10
of 37
pro vyhledávání: '"O. Chamirian"'
Autor:
Christa Vrancken, M.J.H. van Dal, Peter Verheyen, Jorge A. Kittl, Anne Lauwers, K. Funk, Sofie Mertens, K. Verheyden, O. Chamirian, Caroline Demeurisse
Publikováno v:
Microelectronic Engineering. 83:2268-2271
NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, XRD (X-ray diffraction) analysis and S
Autor:
O. Chamirian, Alain M. Jonas, Jorge A. Kittl, Bert Brijs, Anne Lauwers, Karen Maex, Wilfried Vandervorst, Youssef Travaly, M. Van Hove, Timo Sajavaara
Publikováno v:
Microelectronic Engineering. 82:492-496
The thermal stability of Ni silicide, in comparison to the more conventionally used Co silicide, is studied by X-ray reflectivity. These data were complemented by sheet resistance measurements, transmission electron microscopy, time-of-flight Rutherf
Autor:
Bencherki Mebarki, O. Chamirian, M. A. Pawlak, Tushar Mandrekar, Karen Maex, Muriel de Potter, Anne Lauwers, Xavier Pages, Jorge A. Kittl, Toon Raymakers, Richard Lindsay, Mark Van Dal
Publikováno v:
Materials Science and Engineering: B. :29-41
Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the growth kinetics of Ni 2 Si and NiSi on single-crystalline and poly-crystalline silicon and th
Autor:
M. A. Pawlak, Jorge A. Kittl, Tom Schram, O. Chamirian, Anne Lauwers, Anabela Veloso, Karen Maex, André Vantomme
Publikováno v:
Microelectronic Engineering. 76:349-353
In this study, we investigated material issues that impact the applicability of Ni silicide gates to complementary-metal-oxide-semiconductor (CMOS) technologies, including the effect of dopants on the kinetics of the silicidation reaction, and the th
Autor:
Richard Lindsay, M.J.H. van Dal, Jorge A. Kittl, M. de Potter, O. Chamirian, Karen Maex, Anne Lauwers
Publikováno v:
Microelectronic Engineering. 76:297-302
The reaction of Ni films with a Si"0"."8Ge"0"."2 alloy is studied in the temperature range of 200-750 ^oC from the point of view of process window, morphology of the resulting silicide, and mechanisms of degradation at high temperatures. The effect o
Autor:
Jorge A. Kittl, Karen Maex, X. Pages, Christa Vrancken, Anne Lauwers, Ernst Hendrik August Granneman, O. Chamirian, M. de Potter, K. van der Jeugd, Caroline Demeurisse, M.J.H. van Dal, Vladimir Ivanovich Kuznetsov, Richard Lindsay
Publikováno v:
Microelectronic Engineering. 76:303-310
Excessive Ni-silicide formation is observed at the edges of poly gates and source/drain lines. The excessive silicidation results in locally completely silicided poly gates and in very high junction leakage in small source/drain islands. It was studi
Publikováno v:
Microelectronic Engineering. 70:201-208
Ni silicidation processes without a capping layer and with a TiN capping layer are studied from the point of view of process window, morphology of the resulting silicide, and mechanisms of degradation at higher temperatures. The thermal stability of
Autor:
Richard Lindsay, Karen Maex, Anne Lauwers, M. de Potter, A. Akheyar, M.J.H. van Dal, O. Chamirian, Jorge A. Kittl
Publikováno v:
Microelectronic Engineering. 70:158-165
The scaling behavior of Co, Co-Ni and Ni silicides to sub-40 nm gate length CMOS technologies with sub-100 nm junction depths was evaluated. Limitations were found for Co and Co-Ni alloy silicides, which exhibited an increase in sheet resistance at g
Publikováno v:
Microelectronic Engineering. 64:173-180
The presence of Ni can significantly promote the CoSi-CoSi2 transformation process reducing the transformation temperature and, in consequence, the thermal budget of silicidation. In this work, silicidation of the Si/Co0.95Ni0.05/Ti system was invest
Autor:
Karen Maex, O. Chamirian, Richard Lindsay, Anne Lauwers, Christa Vrancken, M. de Potter, Caroline Demeurisse
Publikováno v:
Microelectronic Engineering. 64:131-142
As scaling progresses, conventional Co/Ti silicidation is facing difficulties related to the nucleation of the low resistive Co-disilicide phase during the second RTP step of silicidation. When linewidths, junction depths and silicide thicknesses are