Zobrazeno 1 - 10
of 174
pro vyhledávání: '"O. C. Hellman"'
Publikováno v:
Surface Review and Letters. :245-269
Surface stress and energy are concepts which are often misunderstood. In this work, we will clarify the difference between the two. We describe the use of transmission electron microscopy to measure surface stress by quantitative analysis of strain c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4297ae520db941314921e5b7eb01d19
https://doi.org/10.1142/s0218625x97000249
https://doi.org/10.1142/s0218625x97000249
Autor:
O. C. Hellman
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2825-2829
We study the epitaxial crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Silicon surface features which are buried beneath the Ge film are seen to affect the rate of crystallization. In particular, solid phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f3e10d3c2e92c37c3574dbbfec04c6
https://doi.org/10.1116/1.578951
https://doi.org/10.1116/1.578951
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1631-1636
The microstructure and stoichiometry of nitrides formed by direct low‐energy ion beam nitridation has been investigated as a function of ion energy and substrate temperature for Si(100) and SiGe/Si(100) films. Cross‐sectional transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9360a7693beaafc9c6ad83594fb67f14
https://doi.org/10.1116/1.577761
https://doi.org/10.1116/1.577761
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:713-718
Ion beam oxidation (IBO) is a low temperature growth technique where a directional low energy (≤1 keV) ion beam introduces the oxygen into the substrate and athermally activates the chemical reaction leading to the oxide growth. In this work, IBO o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::527eb538db9c19150859efccb75f97de
https://doi.org/10.1116/1.577715
https://doi.org/10.1116/1.577715
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 67:301-307
The growth of thin nitride films of Si, MBE-grown Ge and Si x Ge 1− x alloys on Si by low energy ion beam nitridation (IBN)_has been investigated both theoretically and experimentally. This paper focuses on the modeling of the kinetics of IBN thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89b0c11495b9ebc2c36540521a2ac232
https://doi.org/10.1016/0168-583x(92)95821-8
https://doi.org/10.1016/0168-583x(92)95821-8
Publikováno v:
Materials Science and Engineering: B. 12:97-101
Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si1−xGex grown by molecular beam epitaxy on Si(100) was investigated at room temperature using 18O2+ ion beams with energies E ion ranging from 100 eV to 1 keV. The dependence of phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4c00c494aba7cdc36d73d7822e9206
https://doi.org/10.1016/0921-5107(92)90266-c
https://doi.org/10.1016/0921-5107(92)90266-c
Autor:
J. L. Olson, W. J. Croft, O. Vancauwenberghe, Robert J. Culbertson, Nicole Herbots, O. C. Hellman
Publikováno v:
Materials Science and Engineering: B. 12:53-59
Thin films of silicon nitride, germanium nitride and silicon germanium nitride were formed using direct low energy ion beam nitridation. In this process a monoenergetic nitrogen ion beam directly impinges on the material to be nitrided, in the presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::925918242813bcebaf81d7c36d46d266
https://doi.org/10.1016/0921-5107(92)90258-b
https://doi.org/10.1016/0921-5107(92)90258-b
Publikováno v:
Applied Physics Letters. 59:2031-2033
New dielectric materials based on SiGe have been formed at room temperature by direct ion beam oxidation and nitridation. Si0.8Ge0.2 layers were deposited by molecular beam epitaxy on Si(100) and then exposed to a low‐energy ion beam of 18O+2 to fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4db726ffdc848be48e651212523164b
https://doi.org/10.1063/1.106122
https://doi.org/10.1063/1.106122
Publikováno v:
MRS Proceedings. 223
Direct Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6c1df9aed3bb9a4d9f057d9fcd4a4d7
https://doi.org/10.1557/proc-223-235
https://doi.org/10.1557/proc-223-235
Publikováno v:
MRS Proceedings. 236
Three important effects of low energy direct Ion Beam Deposition (IBD) are the athermal incorporation of material into a substrate, the enhancement of atomic mobility in the subsurface, and the modification of growth kinetics it creates. All lead to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43eba165d7f6ca44916f3e5500c4e1d0
https://doi.org/10.1557/proc-236-287
https://doi.org/10.1557/proc-236-287