Zobrazeno 1 - 1
of 1
pro vyhledávání: '"O. Bracher, David"'
Autor:
L. Crook, Alexander, P. Anderson, Christopher, C. Miao, Kevin, Bourassa, Alexandre, Lee, Hope, L. Bayliss, Sam, O. Bracher, David, Zhang, Xingyu, Abe, Hiroshi, Ohshima, Takeshi, L. Hu, Evelyn, David, D. Awschalom
Publikováno v:
Nano Letters. 20(5):3427-3434
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::399de2edf051a55f6bf4aa4d7c3fd9b0
https://repo.qst.go.jp/records/80279
https://repo.qst.go.jp/records/80279
