Zobrazeno 1 - 10
of 26
pro vyhledávání: '"O. Boissière"'
Autor:
P. Lehnen, Chao Zhao, S. Van Elshocht, Bert Brijs, C. Lohe, C. Adelmann, S. De Gendt, O. Boissière, J. Schubert, Alexis Franquet, M. Roeckerath, Thierry Conard
Publikováno v:
Chemical Vapor Deposition. 13:567-573
Thin dysprosium-, scandium-, and hafnium-based oxide dielectric films are deposited by atomic vapor deposition (AVD) using tris(6-ethyl-2,2-dimethyl-3,5-decanedionato) dysprosium [Dy(EDMDD)3], tris(6-ethyl-2,2-dimethyl-3,5-decanedionato) scandium [Sc
Autor:
Christoph Adelmann, Sven Van Elshocht, Ghassan Barbar, C. Lohe, Thierry Conard, Stefan De Gendt, Barry O'Sullivan, Tom Seidel, P. Lehnen, Z. Karim, O. Boissière, Tom Schram, L.-A. Ragnarsson
Publikováno v:
ECS Transactions. 11:557-567
Atomic Vapor Deposition (AVD®) and MOCVD of TaCN-based films are studied for high work function needed for PMOS Gate-first designs. Work functions as high as 4.85eV and 4.92eV are achieved on HfSiON and HfSiO high k dielectrics, respectively. The fi
Autor:
M. Tapajna, U. Weber, O. Boissière, G. Barbar, C. Manke, J. Lindner, P. K. Baumann, Karol Fröhlich
Publikováno v:
Microelectronic Engineering. 83:2277-2281
Using beta-diketonate Ru precursors diluted in n-octane Ru and RuO"2 layers were grown on plane 200nm SiO"2/Si wafers by atomic vapor deposition (AVD^(R)). AVD^(R) was carried out in an AIXTRON Tricent^(R) system using liquid delivery of the rutheniu
Autor:
O. Boissière, M. Scheib, P. K. Baumann, J. Lindner, M. Schumacher, C. Manke, A. Brodyanski, S. Miedl
Publikováno v:
Microelectronic Engineering. 82:242-247
Ru and RuO"2 thin films for advanced metal gate applications were deposited on 200mm SiO"2/Si substrate by the novel deposition technique atomic vapor deposition (AVD(TM)). AVD(TM) was carried out in an Aixtron Tricent(TM) system using liquid deliver
Autor:
François Martin, By. Nguyen, F. Allain, Walter Schwarzenbach, O. Rozeau, Olivier Weber, Frederic Boeuf, Sébastien Barnola, C. Fenouillet-Beranger, P. Perreau, Charles Leroux, X. Garros, R. Gassilloud, Olivier P. Thomas, M. Casse, Thomas Skotnicki, O. Boissière, P.K. Baumann, M-A. Jaud, Francois Andrieu, J.-P. Noel, U. Weber, L. Brevard, Konstantin Bourdelle, O. Faynot, J. Mazurier, Christian Arvet, Claude Tabone, Thierry Poiroux, Alain Toffoli, D. Lafond, L. Tosti, P. Lehnen
Publikováno v:
2010 International Electron Devices Meeting.
For the first time, we demonstrate low-V T (V Tlin ±0.32V) nMOS and pMOS adjusted in a gate first FDSOI technology by work-function engineering of TiN/TaAlN metal gates. Especially, for low-V T pMOS, various Chemical-Vapor-Deposited TaAlN stacks wit
Autor:
O. Boissière, Lars-Ake Ragnarsson, Johan Meersschaut, E. Rohr, S. De Gendt, Christoph Adelmann, Alexis Franquet, Tom Schram, V.S. Chang, S. Van Elshocht, Thierry Conard, C. Lohe, P. Lehnen
Publikováno v:
MRS Proceedings. 1073
TaCN-based metal films were grown by metal-organic chemical-vapor deposition (MOCVD) and atomic vapor-deposition (AVD). Thermal decomposition at 500ºC leads to com-positions of approximately Ta0.50C0.4N0.1 (“TaCN”), whereas a reactive process us
Publikováno v:
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.
The deposition of metal oxide thin films by metal-organic chemical vapor deposition is a good solution for the fabrication of high-k gate oxide and ferroelectric oxides for ferroelectric random access memories. The main challenges to be addressed in
Autor:
S. Van Elshocht, Naohisa Sengoku, Jorge A. Kittl, O. Boissière, A. Rothschild, C. Lohe, Christoph Adelmann, P. Lehnen, Thierry Conard, A. Franquet, Lars-Ake Ragnarsson, Barry O'Sullivan, Hugo Bender, Paola Favia, S. De Gendt, Tom Schram, Johannes Meersschaut, Yasutoshi Okuno, Chao Zhao
Publikováno v:
Journal of Applied Physics. 105:053516
TaCN layers were deposited using metal-organic chemical-vapor deposition for applications as metal gate electrodes in p-type metal-oxide-semiconductor (pMOS) devices. The films were formed by thermal decomposition of tertiary-amylimido-tris(dimethyla
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