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Microfabrication of flexible gas sensing devices based on nanostructured semiconducting metal oxides
Publikováno v:
Sensors and Actuators A: Physical. 219:88-93
Flexible gas sensor devices comprised of heating and transducing elements are produced by directly integrating multilayer polymeric-based platforms and highly crystalline semiconducting metal oxide nanostructures grown via vapour-phase method, as mai
Autor:
Helena Castán, M. Zabala, Joan Marc Rafi, Hidenori Ohyama, Kenichiro Takakura, Héctor García, Salvador Dueñas, Francesca Campabadal, O. Beldarrain, Luis Bailón, Isao Tsunoda
Publikováno v:
Thin Solid Films. 534:482-487
2 MeV electron irradiation effects on the electrical properties of Al 2 O 3 and HfO 2 -based metal–insulator–semiconductor capacitors have been studied. High-k dielectrics were directly grown on silicon by atomic layer deposition. Capacitors were
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:769-771
In this letter, we focus on the cycle-to-cycle variability of the low resistive state in $\hbox{Ni/HfO}_{2}$ -based resistive switching structures. The results show that several discrete current levels can individually last hundreds of cycles. They a
Publikováno v:
ECS Transactions. 28:213-221
An extensive mercury-probe capacitance-voltage characterization is carried out on Al2O3 and HfO2 films deposited on silicon by atomic layer deposition (ALD) at different temperatures and subjected to various high-temperature post-deposition thermal t
Publikováno v:
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA).
A quantized bands model capable to generate capacitance-voltage (C-V) curves of MOS capacitors was implemented and numerical details are discussed. This model is applied to the extraction of the dielectric constant of Al 2 O 3 layers with known physi
Publikováno v:
2015 10th Spanish Conference on Electron Devices (CDE).
In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO 2 -based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device st
Autor:
Francesca Campabadal, O. Beldarrain, M. Zabala, Marta Duch, Mireia Bargallo Gonzalez, M.C. Acero
Publikováno v:
2015 10th Spanish Conference on Electron Devices (CDE).
Blistering of 11 nm and 45 nm-thick Al 2 O 3 layers deposited by ALD on silicon substrates is studied in Al-Al 2 O 3 -Si structures fabricated using a field isolated process. Blisters are shown to be unevenly distributed and with different dimensions
Publikováno v:
ResearcherID
Flexible gas sensing devices have been fabricated by directly integrating multilayer polymer-based platforms and highly crystalline tungsten oxide nanoneedles grown via aerosol-assisted chemical vapor deposition (AACVD). Thermal simulations and chara