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Publikováno v:
Indian Journal of Physics. 95:1341-1344
Using the variational method within the effective-mass approximation, the effects of geometrical shape and impurity position on the ground-state self-polarization and binding energy of a donor impurity are theoretically studied for the infinite GaAs/
Publikováno v:
Indian Journal of Physics. 91:263-268
The ground state, 1s, and the excited state, 2p, energies of a hydrogenic impurity in a GaAs–Ga1−x Al x As spherical quantum dot, are computed as a function of the donor positions. We study how the impurity self-polarization depends on the locati
Publikováno v:
Superlattices and Microstructures. 94:131-137
We have studied and computed variationally the impurity energy, impurity energy turning points, and ground state normalized binding energy as functions of the impurity position for shallow impurity in asymmetric quantum wells under hydrostatic pressu
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 60:196-199
In this work we study the effects of barrier height ratio V L / V R on asymmetric Al x L Ga 1 − x L As / GaAs / Al x R Ga 1 − x R As quantum wells in absence of external influences. We use a variational method within the effective mass approximat
Publikováno v:
Superlattices and Microstructures. 59:13-20
Based on the effective mass approximation within a variational approach, we have calculated the temperature effect on the donor binding energy, self-polarization (SP), and electric field polarization (FP) in a GaAs/Ga0.7Al0.3As spherical quantum dot
Autor:
O. Akankan
Publikováno v:
Superlattices and Microstructures. 55:45-52
In this work, the effects of spatial electric field and ratios of dot edge lengths ( L z / L ) on the binding energy and polarization of a donor impurity in TQD are presented. Calculations are performed within the effective-mass approximation using t
Publikováno v:
Superlattices and Microstructures. 50:80-89
Within the framework of effective-mass approximation, we have studied the effects of hydrostatic pressure on the binding energy of a shallow donor impurity in an infinite quantum well by means of a variational method. It is found that the first deriv
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:136-140
In this work we have calculated the hydrostatic pressure and the electric field effect on the self-polarization (SP) in GaAs/Ga1−xAlx As quantum well. The binding energies of donors and the self-polarization in quantum wells are investigated with a
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 36:119-122
In this work, we investigated the effect of both spatial electric and axial magnetic fields on the impurity ground state energy and the polarization of a donor impurity in square GaAs/AlAs QWWs. We show that the impurity ground state energy and the p