Zobrazeno 1 - 10
of 48
pro vyhledávání: '"O. A. Radaev"'
Publikováno v:
Instruments and Experimental Techniques. 64:259-263
A hardware–software complex that has no analogues in Russia and abroad and that is designed to measure the distribution of the cutoff frequency of electroluminescence over the area of a light-emitting heterostructure (LHS) is described. The complex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30180a6d9ab0e6b0228eb8ceaa87634b
https://doi.org/10.1134/s0020441221010231
https://doi.org/10.1134/s0020441221010231
Publikováno v:
Proceedings of Universities. Electronics. 24:92-96
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87742fb08e2b10aeb030f03946aa5427
https://doi.org/10.24151/1561-5405-2019-24-1-92-96
https://doi.org/10.24151/1561-5405-2019-24-1-92-96
Publikováno v:
2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE).
It is known that defects of InGaN/GaN LED heterostructure lead to a decrease of the slope of the light output power-current (P-I) characteristic of the LED. This is especially pronounced in microcurrent mode. An automated installation has been develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d869a796c3a8ff224930fc2059e2ca4
https://doi.org/10.1109/apede48864.2020.9255413
https://doi.org/10.1109/apede48864.2020.9255413
Publikováno v:
Izmeritel`naya Tekhnika. :42-46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f20b5b93e68cc2df57b48eb5ed4972c
https://doi.org/10.32446/0368-1025it.2019-8-42-46
https://doi.org/10.32446/0368-1025it.2019-8-42-46
Publikováno v:
2020 Moscow Workshop on Electronic and Networking Technologies (MWENT).
A method for measuring the 3 dB frequency of the modulation of separate spectral components of the full electroluminescence spectrum of light-emitting diodes (LEDs) is described. The method consists in passing through the LED a series of current puls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41840fc97e434aae89c01c4a18fe98a
https://doi.org/10.1109/mwent47943.2020.9067385
https://doi.org/10.1109/mwent47943.2020.9067385
Publikováno v:
Semiconductors. 52:1976-1981
The causes and mechanisms of variation in the quantum efficiency and other characteristics of InGaN/GaN heterostructures are actively investigated in various operating modes. The results are presented from an experimental study of the variation in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4675a11de96686522d93e06c3c2b6016
https://doi.org/10.1134/s1063782618150125
https://doi.org/10.1134/s1063782618150125
Publikováno v:
Journal of Physics: Conference Series. 2086:012083
A method for measuring the distribution of the differential charge carriers lifetime over energy levels in the local regions of a light-emitting heterostructure is presented. The method has been tested on commercial green InGaN-based LEDs. It has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b02e69b9402f7f162d72256ce3edce70
https://doi.org/10.1088/1742-6596/2086/1/012083
https://doi.org/10.1088/1742-6596/2086/1/012083
Publikováno v:
Journal of Physics: Conference Series. 2103:012177
A model of the optical power degradation of an InGaN/GaN LED during testing under direct current, which takes into account the inhomogeneous distribution of the defects density in the heterostructure, is presented. According to the simulation results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6b58e2a13dcb3184d53db7f7f83b46
https://doi.org/10.1088/1742-6596/2103/1/012177
https://doi.org/10.1088/1742-6596/2103/1/012177
Publikováno v:
Izmeritel`naya Tekhnika. :49-53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39ea98f7545f716088beedd150ffe12d
https://doi.org/10.32446/0368-1025it.2018-9-49-53
https://doi.org/10.32446/0368-1025it.2018-9-49-53
Publikováno v:
Technical Physics Letters. 43:224-226
It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures.. The threshold current exhibits correlation with the value of operating current co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0015c4bb0a8f9529349796802baf4986
https://doi.org/10.1134/s1063785017020250
https://doi.org/10.1134/s1063785017020250