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pro vyhledávání: '"O. É. Sattorov"'
Publikováno v:
Technical Physics Letters. 36:741-744
It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can b
Publikováno v:
Technical Physics Letters. 29:705-707
The phenomenon of negative magnetoresistance in compensated silicon doped with manganese has been studied. The possibility of using this effect in magnetic field sensors is assessed.