Výsledky vyhledávání

In contrast to conventional plasma deposition methods, High Power Impulse Magnetron Sputtering (HIPIMS) utilizes extremely high power inputs in short pulses, providing for the discharge current densities up to several A/cm 2 . High ion densities are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c186141b4fb30ed700003181b747b10e
https://doi.org/10.1016/j.vacuum.2011.04.017

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Electrical and optical characterization of a pulsed discharge in an inverted cylindrical magnetron

Autor: O V Vozniy, David Duday, Tom Wirtz, Ioana Luciu

Publikováno v: Plasma Sources Science and Technology. 23:045011

An inverted cylindrical magnetron operating in pulsed mode was developed, with a rotating unbalanced system of magnets. The magnetic field was calculated using the finite integration technique in order to determine the optimal anode-to-cathode distan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2019d7d2f5a7dc2bc8c05c56e1e7d0c
https://doi.org/10.1088/0963-0252/23/4/045011

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Double magnetron self-sputtering in HiPIMS discharges

Autor: O V Vozniy, Tom Wirtz, David Duday, A. Lejars

Publikováno v: Plasma Sources Science and Technology. 20:065008

There is an increasing concern that high power impulse magnetron sputtering (HiPIMS) systems are being disadvantaged by relatively low deposition rates compared with traditional dc magnetrons operating at the same average power input. Nevertheless, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8af36d5dab66706edfb28cc4a9bb9b9
https://doi.org/10.1088/0963-0252/20/6/065008

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High-energy negative ion beam obtained from pulsed inductively coupled plasma for charge-free etching process

Autor: O. V. Vozniy, G. Y. Yeom

Publikováno v: Applied Physics Letters. 94:231502

Negative ions in conventional inductively coupled plasma are often more chemically active than positive ions (for example, in CF4 or SF6 plasmas), but inconveniently they are trapped inside the sheath and cannot be used for high-energy surface etchin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb76cccfc12483bec28f0d0c5d2ad3e3
https://doi.org/10.1063/1.3152763

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